Our full publication list can also be found under my google scholar profil.


2024   2023   2022   2021   2020   2019   2018   2017   2016   2015


2024

  • Excitons in quantum technologies – The role of strain engineering
    I. Niehues, E. D. S. Nysten, R. Schmidt, M. Weiß, and D. Wigger
    MRS Bulletin 49, 958-967 (2024)

2023

  • Pseudoheterodyne interferometry for multicolor near-field imaging
    E. Vicentini, W. Nuansing, I. Niehues, I. Amenabar, A. M Bittner, R. Hillenbrand, M. Schnell
    Opt. Express 31(14), 22308-22322 (2023)
  • Real-space observation of ultraconfined in-plane anisotropic acoustic terahertz plasmon polaritons
    S. Chen, P. L. Leng, A. Konečná, E. Modin, M. Gutierrez-Amigo, E. Vicentini, B. Martín-García, M. Barra-Burillo, I. Niehues, C. Maciel Escudero, X. Y. Xie, L. E. Hueso, E. Artacho, J. Aizpurua, I. Errea, M. G. Vergniory, A. Chuvilin, F. X. Xiu, R. Hillenbrand
    Nat. Mater. 22, 860-866 (2023)
  • Identification of weak molecular absorption in single-wavelength s-SNOM images
    I. Niehues, L. Mester, E. Vicentini, D. Wigger, M. Schnell, R. Hillenbrand
    Opt. Express 31(4), 7012-7022 (2023)

2022

  • Percolating Superconductivity in Air‐Stable Organic‐Ion Intercalated MoS2
    J. M. Pereira, D. Tezze, I. Niehues, Y. Asensio, H. Yang, L. Mester, S. Chen, F. Casanova, A. M. Bittner, M. Ormaza, F. Schiller, B. Martín‐García, R. Hillenbrand, L. E. Hueso, M. Gobbi
    Adv. Funct. Mater. 32 (52), 2208761 (2022)
  • Uniaxial strain tuning of Raman spectra of a ReS2 monolayer
    I. Niehues, T. Deilmann, J. Kutrowska-Girzycka, A. Taghizadeh, L. Bryja, U. Wurstbauer, R. Bratschitsch, J. Jadczak
    Phys. Rev. B 105 (20), 205432 (2022)

2021

  • Dark exciton anti-funneling in atomically thin semiconductors
    R. Rosati, R. Schmidt, S. Brem, R. Perea-Causín, I. Niehues, J. Kern, J. A. Preuß, R. Schneider, S. Michaelis de Vasconcellos, R. Bratschitsch, E. Malic
    Nat. Commun. 12, 7221 (2021)

2020

  • Strain-dependent exciton diffusion in transition metal dichalcogenides
    R. Rosati, S. Brem, R. Perea-Causín, R. Schmidt, I. Niehues, S. Michaelis de Vasconcellos, R. Bratschitsch, E. Malic
    2D Mater. 8(1), 015030 (2020)
  • Strain tuning of the Stokes shift in atomically thin semiconductors
    I. Niehues, P. Marauhn, T. Deilmann, D. Wigger, R. Schmidt, A. Arora, S. Michaelis de Vasconcellos, M. Rohlfing, R. Bratschitsch
    Nanoscale 12(40), 20786-20796 (2020)

2019

  • Supercontinuum second harmonic generation spectroscopy of atomically thin semiconductors
    T. Stiehm, R. Schneider, J. Kern, I. Niehues, S. Michaelis de Vasconcellos, R. Bratschitsch
    Rev. Sci. Instrum. 90, 083102 (2019)
  • Thickness determination of MoS2, MoSe2, WS2 and WSe2 on transparent stamps used for deterministic transfer of 2D materials
    N. S. Taghavi, P. Gant, P. Huang, I. Niehues, R. Schmidt, S. Michaelis de Vasconcellos, R. Bratschitsch, M. García-Hernández, R. Frisenda, A. Castellanos-Gomez
    Nano Res. 12, 1691-1695 (2019)
  • Interlayer excitons in bilayer MoS2 under uniaxial tensile strain
    I. Niehues, A. Blob, T. Stiehm, S. Michaelis de Vasconcellos, R. Bratschitsch
    Nanoscale 11 (27), 12788-12792 (2019)

2018

  • The acetone bandpass detector for inverse photoemission: Operation in proportional and Geiger–Müller modes
    C. Thiede, I. Niehues, A. B. Schmidt, M. Donath
    Meas. Sci. Technol. 29(6), 065901 (2018)
  • Strain transfer across grain boundaries in MoS2 monolayers grown by chemical vapor deposition
    I. Niehues, A. Blob, T. Stiehm, R. Schmidt, V. Jadriško, B. Radatović, D. Čapeta, M. Kralj, S. Michaelis de Vasconcellos, R. Bratschitsch
    2D Mater. 5(3), 031003 (2018)
  • Inverted valley polarization in optically excited transition metal dichalcogenides
    G. Berghäuser, I. Bernal-Villamil, R. Schmidt, R. Schneider, I. Niehues, P. Erhart, S. Michaelis de Vasconcellos, R. Bratschitsch, A. Knorr, E. Malic
    Nat. Commun. 9, 971 (2018)
  • Exciton broadening and band renormalization due to Dexter-like intervalley coupling
    I. Bernal-Villamil, G. Berghäuser, M. Selig, I. Niehues, R. Schmidt, R. Schneider, P. Tonndorf, P. Erhart, S. Michaelis de Vasconcellos, R. Bratschitsch, A. Knorr, E. Malic
    2D Mater. 5(2), 025011 (2018)
  • Strain control of exciton–phonon coupling in atomically thin semiconductors
    I. Niehues, R. Schmidt, M. Druppel, P. Marauhn, D. Christiansen, M. Selig, G. Berghäuser, D. Wigger, R. Schneider, L. Braasch, R. Koch, A. Castellanos-Gomez, T. Kuhn, A. Knorr, E. Malic, M. Rohlfing, S. Michaelis de Vasconcellos, R. Bratschitsch
    Nano Lett. 18(3), 1751-1757 (2018)

2017

  • Phonon sidebands in monolayer transition metal dichalcogenides
    D. Christiansen, M. Selig, G. Berghäuser, R. Schmidt, I. Niehues, R. Schneider, A. Arora, S. Michaelis de Vasconcellos, R. Bratschitsch, E. Malic, A. Knorr
    Phys. Rev. Lett. 119(18), 187402 (2017)
  • Single-photon emitters in GaSe
    P. Tonndorf, S. Schwarz, J. Kern, I. Niehues, O. Del Pozo-Zamudio, A. I. Dmitriev, A. P. Bakhtinov, D. N. Borisenko, N. N. Kolesnikov, A. I. Tartakovskii, S. Michaelis de Vasconcellos, R. Bratschitsch
    2D Mater. 4(2), 021010 (2017)

2016

  • Nanoscale Positioning of Single‐Photon Emitters in Atomically Thin WSe2
    J. Kern, I. Niehues, P. Tonndorf, R. Schmidt, D. Wigger, R. Schneider, T. Stiehm, S. Michaelis de Vasconcellos, D. E. Reiter, T. Kuhn, R. Bratschitsch
    Adv. Mater. 28(33), 7101-7105 (2016)
  • Reversible uniaxial strain tuning in atomically thin WSe2
    R. Schmidt, I. Niehues, R. Schneider, M. Drueppel, T. Deilmann, M. Rohlfing, S. Michaelis De Vasconcellos, A. Castellanos-Gomez, R. Bratschitsch
    2D Mater. 3(2), 021011 (2016)

2015

  • Nanoantenna-Enhanced Light–Matter Interaction in Atomically Thin WS2
    J. Kern, A. Trügler, I. Niehues, J. Ewering, R. Schmidt, R. Schneider, S. Najmaei, A. George, J. Zhang, J. Lou, U. Hohenester, S. Michaelis de Vasconcellos, R. Bratschitsch
    ACS Photonics 2(9), 1260-1265 (2015)