For the synthesis of different kinds of materials the members of the institute have access to well equipped chemistry labs and different kinds of technical equipment for cutting, grinding and polishing as well as equipment for direct synthesis like sputtering or coating machines. The mechanical workshop of the institute designs new facilities or modifies existing equipment in close collaboration with the scientific staff. Further more there are special devices in the institute like an arc-melter to prepare metallic alloys, special furnaces for sample treatments or a melt-spinner for metallic glass preparation etc. The most important devices for materials synthesis, which are accessible in the institute, are summarized in the list below:
Thermal synthesis and processing
Meltspinner HV (Edmund Bühler)
tangential wheel speed up to 50 m/s
melting temperature up to 1500 °C
convertible to copper-mold casting
Arc melter
pre-alloying of high melting metals
Vacuum up to 10-6 mbar
Currents up to 300 A
Temperatures above 2000 °C can be reached
Synthesis of metallic samples of up to 15 g
Meltung under inert gas atmosphere in water cooled copper casting molds
6 x annealing furnace SR 70-750/11 (Gero)
1 x RoF 7/75 and 3 x RoF 4/50 (Heraeus)
anealing in air and argon
maximum temperature 1100 °C (Gero) and 1300 °C (Heraeus)
2 x vacuum furnaces SR 70-500/11 (Gero)
annealing in vacuum down to 1x10E-8 mbar
maximum temperature 1100 °C
Oil oven Phoenix II (Thermo Scientific)
annealing up to 180 °C
very low thermal fluctuations of 0,1 °C
High temperature furnace
High-temperature diffusion experiments in SiC
Tmax: ~ 2500°C
Multi-zone furnace
Resistance furnace with up to ten separate heating zones
Tmax: 1300°C
coating methods
PVD-system Auto 306 (Edwards)
evaporation with two thermal sources
evaporation with one e-beam source equipped with a 4 pocked rotary holder
(simultaneously usable with thermal sources)
high vacuum up to 10E-7 mbar
modified for low temperature sublimation of organic molecules incl. a heated sample holder
CVD-system (self-made)
3-zone-furnace to obtain a temperature gradient
maximum temperature 1100 °C
3 separate gas inlets, one equipped with a digital flow meter
digital pressure control
working pressure down to 10E-3 mbar
Savannah 100 ALD-system
(Cambridge NanoTech)
monolayer accurate deposition of oxide on surfaces with high aspect ratios
up to four precursor installed at the same time
Potentiostats / galvanostats
PGSTAT 302N (Autolab)
2, 3 oder 4 electrode-setup
maximum potential +- 10 V
potentiostat bandwith 1 MHz
MOD 7050 (Amel Instruments)
2,3 oder 4 Electrode-setup
maximum potential +- 45 V
maximum current 4 A
TEM preparation
Model 691 PIPS (Gatan)
Precision Ion Polishing System for TEM preparation
thinning with argon ions by two guns with variable incident angles
backlight, sight glass und optical microscope for process control
Model 650 Dimple Grinder (Gatan)
for mechanical thinning of TEM samples down to several µm
double rotation system for homogeneous thinning
TenuPol-5
Twin-Jet Elektropolisher Tenupol-5 (Struers) for thinning electron transparent foils (< 100 nm)
tunable voltages: 0 - 40 V
cooling device for different electrolytes
Mechanical processing
HPT-press (self-made)
up to 4 GPa static pressure
variable rotation speed
Analysis
Of course the Institute of Materials Physics provides a broad range of facilities for materials analysis within the interdisciplinary research area covered by the groups that work in our institute. These facilities range from chemical analysis or calorimetry to structure analysis on the atomic scale, to mention just a few examples. A special position takes our isotope lab, where radiotracer measurements are used to determine diffusion behavior and diffusion mechanisms. Classical microscopy is also an important part of an institute in the field of materials physics. Thus, we employ several optical microscopes, but also scanning electron-, transmission electron- and atomic force microscopes, respectively with special equipment for sample preparation. Additionally, we have strong foci on tomographic atom probe tomography, on the electrical characterization of semiconductors or polymer electrolytes, on calorimetry and thermal analysis and also on the mechanical characterization of materials with respect of their yield strength or hardness. The following list summarizes the most important devices that are used for analysis purposes:
thermal analysis
Diamond DSC (Perkin Elmer)
liquid nitrogen thermostat
power compensated DSC for measurements from -170 °C to 500 °C
heating rates up to 500 K/min
Labsys TG-DSC (Setaram)
combined thermogravimetry und heat-flux DSC-measurements up to 1600 °C
modified for measurements in high purity argon atmosphere
Q 100 DSC (TA Instruments)
heat-flux DSC for measurements from -80 °C to 500 °C
modulated DSC
TAM III nano-calorimeter (Thermometric)
high precision isothermal calorimetry up to 150 °C with a resolution of 10 nW
controllable gas flux
Fast chip-calorimeter (self-made)
Based on commercial sensor chips with a measuring area of 100 µm x 100 µm
Sample masses in the range of nanograms
Temperature range: 30 °C - 450 °C
Heating rates: 100 K/s - 10000 K/s
Integration in PPMS to measure in vacuum
HTC 1800K Drop-calorimeter (Setaram)
high temperature isothermal measurements
precision Cp-determination
Dilatometer (Linseis)
precise determination of length changes by thermal expansion or phase transformation down to 0,1 µm
temperature range from -190 °C to 550 °C
Physical Property Measurement System (PPMS)
Evercool II(Quantum Design)
measurements from 1.9 K up to 400 K in a He-atmosphere or vacuum/high-vacuum.
Resistivity option: DC resistivity measurements
ACT option: AC resistivity measurements, Hall-effect, I-V-curves, critical current
HC option: measurements of the specific heat capacity
TTO option: thermal transport properties as heat conductivity, Seebeck-coefficient, el. conductivity, Figure of Merit, Nernst effect
ACMS option: measurement of the AC-susceptibility
VSM option: vibrating sample magnetometer to measure the DC-magnetisation and hysteresis curves (9-tesla magnet)
Microscopy
VHX 500K digital microscope (Keyence)
modular digital microscope with 200x magnification and 2 MPixel
3D depth measurements with analysis function
software for automatic picture analysis concerning particle size and number
Nova Nano SEM 230 (FEI)
high resolution imaging with up to 30 kV
low-vacuum-modus for non-conductive or contaminating samples
Pt-injection system
EDX-detector (EDAX) for localized element analysis
EBSD-detektor for localized determination of crystal orientations (utilizable with EDX)
Titan Themis G3 300 TEM (FEI)
Sub-Angström resolution of 80 pm
Ultrafast quadrupole EDX detector
Monochromator with energy resolution of < 200 meV
Detection of electromagnetic fields using a segmented detector for differential phase contrast (DPC)
Lorentz lens for magnetic imaging
Ultrafast EELS (1000 spectra per s)
Ultrafast in-situ CMOS camera (4k x 4k)
Z contrast imaging using HAADF detector
TEM holders for straining, heating, cooling, inert gas transfer
Software for strain analysis, focus series reconstruction, etc.
Atomic Force Microscope Systems XE-100 (PARK)
separate X-Y and Z scanner
High- and low voltage mode for improved resolution
modular setup for future use of EFM, MFM, ...
X-ray analysis
D5000 X-ray diffractometer (Siemens)
Cu or Cr anode
size and strain analysis of poly-crystalline and powder samples
in- und ex-situ analysis of crystallizing amorphous material
one device is equipped with a heating chamber for in-situ experiments up to 600°C in vacuum or protective atmospheres
mechanical analysis
material testing machine 1195 (Instron)
maximum load 50 kN
additional external displacement sensor
free programmable computer controller
load cycle is possibleadditional oven for deformation under elevated temperatures
Miniature material testing machine (self-made)
Creep and uniaxial tensile testing via LabVIEW control
Forces
Maximum: 200 N
Accuracy: ±0,4 μm
Displacement
Maximum: 2000 μm
Accuracy: ±1,5 μm
Maximum temperature: 200 °C
Sample dimensions (dog-bone shape)
Gauge width: 150 μm - 550 μm
Gauge thickness: 40 µm - 2000 µm
Gauge length: 4000 µm
Nano-Indenter (FemToTools FT-NMT04-XYZ)
Berkovich and Cube-corner tips
Force range: 0.5 nN to 200 mN
Noise floor: 500 pN and 50 pm
continuous stiffness measurements
96 kHz for force and displacement control
micro-indenter
electrical analysis
4200-SCS (Keithley)
setup for precision electrical characterization of conductors and semi-conductors
Setup for impedance spectroscopy measurements and temperature / pH measurements
Radiotracer laboratory
Diffusion investigations with the application of radioactive isotopes are traditionally carried out at the Institute of Materials Physics of the University of Münster. The institute has a well-equipped laboratory for radioisotope storage and handling including high-end nuclear detectors for precision counting of both β- and γ-decay intensities. An ultra-low background of the detectors allows reliable detection of extremely small amounts of radioisotopes associated with even a few short-circuit diffusion paths existing in well-annealed coarse-grained polycrystals or, as recently shown, even in bi- and tri-crystals.
Polishing device
Struers Tegramin-25
A set of furnaces enabling diffusion annealing either under the given atmosphere or under vacuum conditions.
Microtome Leica using for serial sectioning via microtome cutting of relatively ductile materials like Cu or Al
Sections of 2 μm to 20 μm can be reliably cut.
The section thickness is measured by weighing the sections on a microbalance.
Penetration profiles from 10 to more than 300 μm can reliably be measured that corresponds to the diffusion rates from 10-18 m2/s to 10-13 m2/s.
House-made mechanical sectioning device via precision grinding
Section of 0.2 to 20 μm can be handled.
The section thickness is measured by weighing the specimen before and after sectioning on a microbalance.
The diffusion rates from 10-19 m2/s to 10-13 m2/s are accessible.
Ion-beam sputtering device
Section of 0.02 to 0.5 μm can be handled.
The section thickness is measured by weigh loss of the specimen after sputtering.
The diffusion rates from 10-23 m2/s to 10-17 m2/s are accessible.
Microbalance with accuracy of about 0.1 μg
Detectors for g-spectroscopy with automatic sample changer