Dr. Robert Schmidt

PostDoc

Wilhelm-Klemm-Str. 10
48149 Münster

E-Mail: robert.schmidt@uni-muenster.de

Tel.: +49 251 83-36327

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Publications

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  Assembly of large hBN nanocrystal arrays for quantum light emission, J. Preuß, E. Rudi, J. Kern, R. Schmidt, R. Bratschitsch, and S. Michaelis de Vasconcellos, 2D Materials 8, 035005 (2021)

• Strain-dependent exciton diffusion in transition metal dichalcogenides, R. Rosati, S. Brehm, R. Perea-Causin, R. Schmidt, I. Niehues, S. Michaelis de Vasconcellos, R. Bratschitsch, and E. Malic, 2D Materials 8, 015030 (2020)

• Strain tuning of the Stokes shift in atomically thin semiconductors, I. Niehues, P. Marauhn, T. Deilmann, D. Wigger, R. Schmidt, A. Arora, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, Nanoscale 12, 20786-20796 (2020)

• Theory of the Coherent Response of Magneto-Excitons and Magneto-Biexcitons in Monolayer Transition Metal Dichalcogenides, F. Katsch, D. Christiansen, R. Schmidt, S. Michaelis de Vasconcellos, R. Bratschitsch, A. Knorr, and M. Selig, Phys. Rev. B 102, 115420 (2020)

• Ultrafast dynamics in monolayer TMDCs: the interplay of dark excitons, phonons and intervalley Coulomb exchange, M. Selig, F. Katsch, R. Schmidt, S. Michaelis de Vasconcellos, R. Bratschitsch, E. Malic, and A. Knorr, Phys. Rev. Res. 1, 022007 (2019)

• Thickness determination of MoS₂ , MoSe₂ , WS₂ and WSe₂ on transparent stamps used for deterministic transfer of 2D materials, N. S. Taghavi, P. Gant, P. Huang, I. Niehues, R. Schmidt, S. Michaelis de Vasconcellos, R. Bratschitsch,  M. García-Hernández, R. Frisenda, and A. Castellanos-Gomez, Nano Research 12, 1691-1695 (2019)

• Thickness-dependent refractive index of 1L, 2L, and 3L MoS₂, MoSe₂, WS_2, and WSe₂, C. Hsu, R. Frisenda, R. Schmidt, A. Arora, S. Michaelis de Vasconcellos, R. Bratschitsch, H. S. J. van der Zant, and A. Castellanos-Gomez, Adv. Optical Mater. 7, 1900239 (2019)

• Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride, D. Wigger, R. Schmidt O. Del Pozo-Zamudio, J. Preuß, P. Tonndorf, R. Schneider, P. Steeger, J. Kern, Y. Khodaei, J. Sperling, S. Michaelis de Vasconcellos, R. Bratschitsch, and T. Kuhn, 2D Materials 6, 035006 (2019)

• Zeeman spectroscopy of excitons and hybridization of electronic states in few-layer WSe₂, MoSe₂ and MoTe₂, A. Arora, M. Koperski, A. Slobodeniuk, K. Nogajewski, R. Schmidt, R. Schneider, M. Molas, S. Michaelis de Vasconcellos, R. Bratschitsch, and M. Potemski, 2D Materials 6, 01050 (2018)

• Correlation of intermittency of quantum dot photoluminescence intensity, decay time, and energy, C. Göhler, R. Schmidt, C. Krasselt, and C. von Borczyskowski, Phys. Status Solidi, accepted article (2018)

• Thickness-dependent differential reflectance spectra of monolayer and few-layer MoS₂, MoSe₂,WS₂ and WSe₂, Y. Niu, S. Gonzalez-Abad, R. Frisenda, P. Marauhn, M. Drüppel, P. Gant, R. Schmidt, N. S. Taghavi, D. Barcons, A. J. Molina-Mendoza, S. Michaelis de Vasconcellos, R. Bratschitsch, D. Perez De Lara, M. Rohlfing, and A. Castellanos-Gomez, Nanomaterials 8, 725 (2018)

• Incorporation of oxygen atoms as a mechanism for photoluminescence enhancement of chemically treated MoS2, C. Schwermann, T. Stiehm, P. Tonndorf, R. Schneider, R. Schmidt, J. Kern, S. Michaelis de Vasconcellos, R. Bratschitsch, and N. L. Doltsinis, Phys. Chem. Chem. Phys. 20, 16918-16923 (2018)

• Strain transfer across grain boundaries in MoS₂ monolayers grown by chemical vapor deposition, I. Niehues, A. Blob, T. Stiehm, R. Schmidt, V. Jadriško, B. Radatović, D. Čapeta, M. Kralj, S. Michaelis de Vasconcellos, and R. Bratschitsch, 2D Materials 5, 031003 (2018)

• Inverted valley polarization in optically excited transition metal dichalcogenides, G. Berghäuser, I. Bernal-Villamil, R. Schmidt, R. Schneider, I. Niehues, P. Erhart, S. Michaelis de Vasconcellos, R. Bratschitsch, A. Knorr, and E. Malic Nature Communications 9, 971 (2018)

• Exciton broadening and band renormalization due to Dexter-like intervalley coupling, I. Bernal-Villamil, G. Berghäuser, M. Selig, I. Niehues, R. Schmidt, R. Schneider, P. Tonndorf, P. Erhart, S. Michaelis de Vasconcellos, R. Bratschitsch, A. Knorr, and E. Malic, 2D Materials 5, 025011 (2018)

• Strain control of exciton-phonon coupling in atomically thin semiconductors, I. Niehues, R. Schmidt, M. Drüppel, P. Marauhn, D. Christiansen, M. Selig, G. Berghäuser, D. Wigger, R. Schneider, L. Braasch, R. Koch, A. Castellanos-Gomez, T. Kuhn, A. Knorr, E. Malic, M. Rohlfing, S. Michaelis de Vasconcellos, and R. Bratschitsch, Nano Lett. 18, 1751-1757 (2018)

• Phonon sidebands in monolayer transition metal dichalcogenides, D. Christiansen, M. Selig, G. Berghäuser, R. Schmidt, I. Niehues, R. Schneider, A. Arora, S. Michaelis de Vasconcellos, R.  Bratschitsch, E. Malic, and A. Knorr, Phys. Rev. Lett.119, 187402 (2017)

• Interlayer excitons in a bulk van der Waals semiconductor, A. Arora, M. Drüppel, R. Schmidt, T. Deilmann, R. Schneider, M. R. Molas, P. Marauhn, S. Michaelis de Vasconcellos, M. Potemski, M. Rohlfing, and R. Bratschitsch, Nature Communications 8, 639 (2017)

• On-chip waveguide coupling of a layered semiconductor single-photon source, P. Tonndorf, O. Del Pozo Zamudio, N. Gruhler, J. Kern, R. Schmidt, A. I. Dmitriev, A. P. Bakhtinov, A. I. Tartakovskii, W. HP Pernice, S. Michaelis de Vasconcellos, and R. Bratschitsch, Nano Lett. 17, 5446 (2017)

• Valley dynamics of excitons in monolayer dichalcogenides, G. Plechinger, P. Nagler, A. Arora, R. Schmidt, A. Chernikov, J. Lupton, R. Bratschitsch, C. Schüller, and T. Korn, Phys. Status Solidi RRL 11, No. 7, 1700131 (2017)

• Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides, R. Frisenda, M. Drüppel, R. Schmidt, S. Michaelis de Vasconcellos, D. Perez de Lara, R. Bratschitsch, M. Rohlfing, and A. Castellanos-Gomez, npj 2D Materials and Applications 1, 10 (2017)

• Polarization contrast scattering spectroscopy of individual metal nanoantennas, T. Stiehm, J. Kern, R. Schmidt, S. Michaelis de Vasconcellos, and R. Bratschitsch, Appl. Phys. B 123, 150 (2017)

• Highly anisotropic in-plane excitons in atomically thin and bulk-like 1T'-ReSe₂, A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch, Nano Lett. 17, 3202 (2017)

• Two-octave spanning supercontinuum generation in stoichiometric silicon nitride waveguides pumped at telecom wavelengths, M. A. G. Porcel, F. Schepers, J. P. Epping, T. Hellwig, M. Hoekman, R. G. Heideman, P. J. M. van der Slot, Ch. J. Lee, R. Schmidt, R. Bratschitsch, C. Fallnich, and K-J. Boller, Optics Express 25 (2), 1542-1554 (2017)

• Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials, R. Frisenda, Y. Niu, P. Gant, A. Molina-Mendoza, R. Schmidt, R. Bratschitsch, J. Liu, L. Fu, D. Dumcenco, A. Kis, D. Perez de Lara, and A. Castellanos-Gomez, Journal of Physics D (2016)
• Trion fine structure and coupled spin-valley dynamics in monolayer tungsten disulfide, G. Plechinger, P. Nagler, A. Arora, R. Schmidt, A. Chernikov, A. Granados del Aguila, P. C. M. Christianen, R. Bratschitsch, C. Schüller, and T. Korn, Nature Communications 7, 12715 (2016)
• Magnetic-field-induced rotation of polarized light emission from monolayer WS₂, R. Schmidt, A. Arora, G. Plechinger, P. Nagler, A. Granados del Águila, M. V. Ballottin, P. C. M. Christianen, S. Michaelis de Vasconcellos, C. Schüller, T. Korn, and R. Bratschitsch, Phys. Rev. Lett., 117, 077402 (2016)
• Nanoscale positioning of single-photon emitters in atomically thin WSe₂, J. Kern, I. Niehues, P. Tonndorf, R. Schmidt, D. Wigger, R. Schneider, T. Stiehm, S. Michaelis de Vasconcellos, D. E. Reiter, T. Kuhn, and R. Bratschitsch, Advanced Materials 28, 7101 (2016)
• Reversible uniaxial strain tuning in atomically thin WSe₂, R. Schmidt, I. Niehues, R. Schneider, M. Drüppel, T. Deilmann, M. Rohlfing, S. Michaelis de Vasconcellos, A. Castellanos-Gomez, and R. Bratschitsch,  2D Materials 3, 021011 (2016)
• Valley Zeeman splitting and valley polarization of neutral and charged excitons in monolayer MoTe₂  at high magnetic fields, A. Arora, R. Schmidt, R. Schneider, M. Molas, I. Breslavetz, M. Potemski, and R. Bratschitsch, Nano Lett. 16, 3624 (2016)
• Ultrafast Coulomb-induced intervalley coupling in atomically thin WS₂, R. Schmidt, G. Berghäuser, R. Schneider, M. Selig, P. Tonndorf, E. Malic, A. Knorr, S. Michaelis de Vascocellos, and R. Bratschitsch, Nano Lett. 16, 2945 (2016)
• Nanoantenna-enhanced light-matter interaction in atomically thin WS₂, J. Kern, A. Trügler, I. Niehues, J. Ewering, R. Schmidt, R. Schneider, S. Najmaei, A. George, J. Zhang, J. Lou, U. Hohenester, S. Michaelis de Vasconcellos, and R. Bratschitsch, ACS Photonics 2, 1260 (2015)
• Single-photon emission from localized excitons in an atomically thin semiconductor, P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch,  Optica 2, 347 (2015)
• The fluorescence intermittency for quantum dots is not power-law distributed: A luminescence intensity resolved approach, R. Schmidt , C. Krasselt , C. Göhler , and C. v. Borczyskowski,  ACS Nano 8, 3506 (2014)
• Photoluminescence emission and Raman response of monolayer MoS₂, MoSe₂, and WSe₂, P. Tonndorf, R. Schmidt, P. Böttger, X. Zhang, J. Börner, A. Liebig, M. Albrecht, C. Kloc, O. Gordan, D. R. T. Zahn, S. Michaelis de Vasconcellos, and R. Bratschitsch, Optics Express, Vol. 21, Issue 4, pp. 4908-4916 (February 2013)
• Change point analysis of matrix dependent photoluminescence intermittency of single CdSe/ZnS quantum dots with intermediate intensity levels,  R. Schmidt, C. Krasselt, and C. v. Borczyskowski,  Chemical Physics, Vol. 406, 9 (2012)

 

Prizes/ Awards