Publications
2021-2024
Jan Klos, Jan Tröger, Jens Keutgen, Merritt P Losert, Nikolay V Abrosimov, Joachim Knoch, Hartmut Bracht, Susan N Coppersmith, Mark Friesen, Oana Cojocaru‐Mirédin, Lars R Schreiber, Dominique Bougeard
Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope‐Purified Silicon Quantum Wells
Advanced Science 11 (42), 2407442 (2024)T Böckendorf, J Kirschbaum, F Kipke, D Bougeard, JL Hansen, AN Larsen, M Posselt, H Bracht
Experimental and theoretical studies on self-diffusion in amorphous germanium
AIP Advances 14 (6), 065129 (2024)J Xu, AD Refino, A Delvallée, S Seibert, C Schwalb, PE Hansen, M Foldyna, L Siaudinyte, G Hamdana, HS Wasisto, J Kottmeier, A Dietzel, T Weimann, JK Prüssing, H Bracht, E Peiner
Deep-reactive ion etching of silicon nanowire arrays at cryogenic temperatures
Applied Physics Reviews 11 (2), 021411 (2024)D Radić, M Peterlechner, K Spangenberg, M Posselt, H Bracht
Challenges of Electron Correlation Microscopy on Amorphous Silicon and Amorphous Germanium
Microscopy and Microanalysis 29 (5), 1579-1594 (2023)V Bonito Oliva, D Mangelinck, S Hagedorn, H Bracht, K Irmscher, C Hartmann, P Vennéguès, M Albrecht
Silicon diffusion in AlN
Journal of Applied Physics 134 (9) (2023)D Radić, M Peterlechner, M Posselt, H Bracht
Fluctuation electron microscopy on amorphous silicon and amorphous germanium
Microscopy and Microanalysis 29 (2), 477-489 (2023)D Radić, M Peterlechner, M Posselt, H Bracht
The Impact of Energy Filtering on Fluctuation Electron Microscopy
Microscopy and Microanalysis (2023)M Posselt, H Bracht, M Ghorbani-Asl, D Radić
Atomic mechanisms of self-diffusion in amorphous silicon
AIP Advances 12(11) (2022)D Radić, M Peterlechner, M Posselt, H Bracht
Treating Knock-On Displacements in Fluctuation Electron Microscopy Experiments
Microscopy and Microanalysis, 1-11 (2022)Jan K Prüßing, Tim Böckendorf, Felix Kipke, Jiushuai Xu, Prabowo Puranto, John Lundsgaard Hansen, Dominique Bougeard, Erwin Peiner, Hartmut Bracht
Retarded boron and phosphorus diffusion in silicon nanopillars due to stress induced vacancy injection
Journal of Applied Physics 131 (7), 075702 (2022)M Posselt, H Bracht, D Radić
Atomistic simulations on the relationship between solid-phase epitaxial recrystallization and self-diffusion in amorphous silicon
Journal of Applied Physics 131 (3), 035102 (2022)D Radić, M Peterlechner, H Bracht
Focused Ion Beam Sample Preparation for In Situ Thermal and Electrical Transmission Electron Microscopy
Microscopy and Microanalysis 27 (4), 828-834 (2021)N Kuganathan, H Bracht, K Davazoglou, F Kipke, and A Chroneos
Impact of oxygen on gallium doped germanium
AIP Advances 11(6), (2021)JK Prüßing, T Böckendorf, G Hamdana, E Peiner, H Bracht
Defect Distribution in Doped Silicon Nanostructures Characterized By Means of Scanning Spreading Resistance Microscopy
ECS Meeting Abstracts, 1097 (2021)A Buchheit, B Teßmer, M Muñoz‐Castro, H Bracht, and HD Wiemhöfer
Electrochemical Proton Intercalation in Vanadium Pentoxide Thin Films and its Electrochromic Behavior in the near‐IR Region
ChemistryOpen 10 (3), 340 (2021)2016 to 2020
D. Radić, S. Hilke, M. Peterlechner, M. Posselt, G. Wilde, and H. Bracht
Comparison of Experimental STEM Conditions for Fluctuation Electron Microscopy
Microscopy and Microanalysis, 1-10 (2020)Slawomir Prucnal, Maciej Oskar Liedke, Xiaoshuang Xiaoshuang Wang, Maik Butterling, Matthias Posselt, Joachim Knoch, Horst Windgassen, Eric Hirschmann, Yonder Berencén, Lars Rebohle, Mao Wang, Enrico Napolitani, Jacopo Frigerio, Andrea Ballabio, Giovanni Isella, René Hübner, Andreas Wagner, Hartmut Bracht, Manfred Helm, Shengqiang Zhou
Dissolution of donor-vacancy clusters in heavily doped n-type germanium
New Journal of Physics (2020)J. K. Prüßing, T. Böckendorf, G. Hamdana, E. Peiner, and H. Bracht
Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy
Journal of Applied Physics 127 (5), 055703 (2020)F. Kipke, T. Südkamp, J. K. Prüßing, D. Bougeard, H. Bracht
Diffusion of boron in germanium at 800°C-900°C revisited
Journal of Applied Physics 127 (2), 025703 (2020)D Radić, S Hilke, M Peterlechner, M Posselt, H Bracht
Fluctuation electron microscopy on silicon amorphized at varying self ion-implantation conditions
Journal of Applied Physics 126 (9), 095707 (2019)Marina Muñoz Castro, Nicolai Walter, Jan K Prüßing, Wolfram HP Pernice, Hartmut Bracht
Self-holding optical actuator based on a mixed ionic-electronic conductor material
ACS Photonics 6 (5) (2019)Anton Plech, Bärbel Krause, Tilo Baumbach, Margarita Zakharova, Soizic Eon, Caroline Girmen, Gernot Buth, Hartmut Bracht
Structural and Thermal Characterisation of Nanofilms by Time-Resolved X-ray Scattering
Nanomaterials 9 (4) (2019)J K Prüßing, G. Hamdana, D. Bougeard, E. Peiner, H. Bracht
Quantitative scanning spreading resistance microscopy on n-type dopant diffusion in germanium and the origin of donor deactivation
Journal of Applied Physics 125 (085105) (2019)S Hilke, J Kirschbaum, V Hieronymus-Schmidt, M Radek, H Bracht, G Wilde, M Peterlechner
Analysis of medium-range order based on simulated segmented ring detector STEM-images: amorphous Si
Ultramicroscopy (2019)T Luo, Christophe Girardeaux, H Bracht, D Mangelinck
Role of the slow diffusion species in the dewetting of compounds: The case of NiSi on a Si isotope multilayer studied by atom probe tomography
Acta Materialia 165 (192-202) (2019)J Kirschbaum, T Teuber, A Donner, M Radek, D Bougeard, R Böttger, J Lundsgaard Hansen, A Nylandsted Larsen, M Posselt, H Bracht
Self-Diffusion in Amorphous Silicon by Local Bond Rearrangements
Physical review letters 120(22) (2018) 225902T Südkamp, G Hamdana, M Descoins, D Mangelinck, HS Wasisto, E Peiner, H Bracht
Self-diffusion in single crystalline silicon nanowires
Journal of Applied Physics 123(16) (2018) 161515B Jahnen, M Luysberg, K Urban, H Bracht, R Schmidt, C Ungermanns, T Bleuel
Interdiffusion in GaSb/AlxGa1-xSb heterostructures
Microscopy of Semiconducting Materials 2001 (2018)R Frieling, H Bracht
Thermal transport across isotopic 28Si/mSi interfaces
Computational Materials Science 139 (2017) 354-360M Radek, B Liedke, B Schmidt, M Voelskow, L Bischoff, J Lundsgaard Hansen, A Nylandsted Larsen, D Bougeard, R Böttger, S Prucnal, M Posselt, H Bracht
Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures
Materials 10(7) (2017) 813G Hamdana, M Bertke, T Südkamp, H Bracht, H S Wasisto, E Peiner
Large-area fabrication of silicon nanostructures by templated nanoparticles arrays
Proc. SPIE 10248, Nanotechnology VIII; (2017) 1024808G Hamdana, T Südkamp, M Descoins, D Mangelinck, L Caccamo, M Bertke, HS Wasisto, H Bracht, E Peiner
Towards fabrication of 3D isotopically modulated vertical silicon nanowires in selective areas by nanosphere lithography
Microelectronic Engineering 179 (2017) 74–82.M Radek, H Bracht, B Liedke, R Böttger, M Posselt
Ion-beam induced atomic mixing in isotopically controlled silicon multilayers
Journal of Applied Physics 120 (2016) 185701.T Südkamp, H Bracht
Self-diffusion in crystalline silicon: A single diffusion activation enthalpy down to 755 °C
Physical Review B 94 (2016) 125208.J Kujala, T Südkamp, J Slotte, I Makkonen, F Tuomisto, H Bracht
Vacancy-donor complexes in highly n-type Ge doped with As, P and Sb
Journal of Physics: Condensed Matter 28 (2016) 335801.S Eon, R Frieling, A Plech, H Bracht
Measurement and analysis of thermal conductivity of isotopically controlled silicon layers by time‐resolved X‐ray scattering
Physica Status Solidi A 213 (2016) 3020-3028.R Frieling, S Eon, D Wolf, H Bracht
Molecular dynamics simulations of thermal transport in isotopically modulated semiconductor nanostructures
Physica Status Solidi A 213 (2016) 549-556.D Issenmann, S Eon, H Bracht, M Hettich, T Dekorsy, G Buth, R Steininger, T Baumbach, J L Hansen, A N Larsen, J W Ager, E E Haller, A Plech
Ultrafast study of phonon transport in isotopically controlled semiconductor nanostructures
Physica Status Solidi A 213 (2016) 541-548.2011 to 2015
H Bracht, T Südkamp, M Radek and A Chroneos
Response to “Comment on ‘Diffusion of n-type dopants in germanium’ ” [Appl. Phys. Rev. 2, 036101 (2015)]
Applied Physics Reviews 2 (2015) 036102.M Radek, H Bracht, BC Johnson, JC McCallum, M Posselt and B Liedke
Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium
Applied Physics Letters 107 (2015) 082112.D Wortelen, R Frieling, H Bracht, W Graf, F Natrup
Impact of zinc halide addition on the growth of zinc-rich layers generated by sherardizing
Surface and Coatings Technology 263 (2015) 66-77.H Bracht
Self-and Dopant Diffusion in Silicon, Germanium, and Their Alloys
Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals; CRC Press (2014) 159-206.R Frieling, M Radek, S Eon, H Bracht, DE Wolf
Phonon coherence in isotopic silicon superlattices
Applied Physics Letters 105 (2014) 132104.R Kube, H Bracht, E Hüger, H Schmidt, J Lundsgaard Hansen, A Nylandsted Larsen, JW Ager III, EE Haller, T Geue, J Stahn, M Uematsu, KM Itoh
Reply to “Comment on ‘Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions’”
Physical Review B 90 (2014) 117202.M Radek, H Bracht, M Posselt, B Liedke, B Schmidt, D Bougeard
Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures
Journal of Applied Physics 115 (2014) 023506-1(5).H Bracht, R Kube, E Hüger, H Schmidt
Properties of Point Defects in Silicon: New Results after a Long-Time Debate
Solid State Phenomena 205-206 (2014) 151-156.A Chroneos, H Bracht
Diffusion of n-type dopants in germanium
Applied Physics Reviews 1 (2014) 011301-1(20).H Bracht, S Eon, R Frieling, A Plech, D Issenmann, D Wolf, JL Hansen, AN ...
Thermal conductivity of isotopically controlled silicon nanostructures
New Journal of Physics 16 (2014) 015021-1(18).H Bracht
Defect engineering in germanium
Phys. Status Solidi A 211 (2014) 109–117.S. Cosentino, S. Knebel, S. Mirabella, S. Gibilisco, F. Simone, H. Bracht, G. Wilde, A. Terrasi
Light absorption in Ge nanoclusters embedded in SiO2: comparison between magnetron sputtering and sol–gel synthesis
Appl. Phys. A, DOI: 10.1007/s00339-013-8101-9.H. Tahini, A Chroneos, H Bracht, ST Murphy, RW Grimes, U Schwingenschlögl
Antisites and anisotropic diffusion in GaAs and GaSb
Applied Physics Letters 103 (2013), 142107-1(4).RA Yankov, A Kolitsch, J von Borany, F Munnik, S Gemming, A Alexewicz, Hartmut Bracht, Harald Rösner, Alexander Donchev, Michael Schütze
Microstructural Studies of Fluorine‐Implanted Titanium Aluminides for Enhanced Environmental Durability
Advanced Engineering Materials 16 (2014) 52–59.R Kube, H Bracht, E Hüger, H Schmidt, JL Hansen, AN Larsen, JW Ager III, E.E. Haller, T Geue, J Stahn
Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions
Physical Review B 88 (2013), 085206-1(12).T. Südkamp, H. Bracht, G. Impellizzeri, J. Lundsgaard Hansen, A. Nylandsted Larsen, and E.E. Haller
Doping dependence of self-diffusion in germanium and the charge states of vacancies
Appl. Phys. Lett. 102 (2013) 242103-1(4).S. Schneider, H. Bracht, J.N. Klug, J. Lundsgaard Hansen, A. Nylandsted Larsen, D. Bougeard, and E.E. Haller
Radiation enhanced self- and boron diffusion in germanium
Physical Review B 87 (2013) 115202-1(10).H. Tahini, A. Chroneos, R. W. Grimes, U. Schwingenschlögl, H. Bracht
Point defect engineering strategies to retard phosphorous diffusion in germanium
Physical Chemistry Chemical Physics, 15 (2013) 367-371.D. Issenmann, S. Eon, N. Wehmeier, H. Bracht, D. Khakhulin, G. Buth, S. Ibrahimkutty, A. Plech
Determination of nanoscale heat conductivity by time-resolved x-ray scattering
Thin Solid Films 541 (2013) 28-31.H. Bracht and G. Impellizzerri
Editorial to the Special Issue “New Aspects of Si- and Ge-based Materials and Devices”
Materials Science in Semiconductor Processing 15 (2012) 587.E. Hüger, R. Kube, H. Bracht, J. Stahn, T. Geue, H. Schmidt
A neutron reflectometry study on silicon self-diffuion at 900°C
Physica Status Solidi B 249 (2012) 2108-2112.H. Bracht, N. Wehmeier, S. Eon, A. Plech, D. Issenmann, J. Lundsgaard Hansen, A. Nylandsted Larsen, E.E. Haller, J.W. Ager III
Reduced thermal conductivity of isotopically modulated silicon multilayer structures
Applied Physics Letters 101 (2012) 064103-1(4).M. Grofmeier and H. Bracht
Cation diffusion in mixed cation silicate glasses under non-equilibrium conditions
Solid State Ionics 222-223 (2012) 47-52.H. Bracht, M. Radek, R. Kube, S. Knebel, M. Posselt, B. Schmidt, E.E. Haller, and D. Bougeard
Ion-beam mixing in crystalline and amorphous germanium isotope multilayers
Journal of Applied Physics 110 (2011) 093502-1(7).H. Tahini, A. Chroneos, R.W. Grimes, U. Schwingenschlögl, and H. Bracht
Diffusion of E centers in germanium predicted using GGA+U approach
Applied Physics Letters 99 (2011) 072112-1(3).G. Impellizzeri, S. Boninelli, F. Priolo, E. Napolitani, A. Chroneos, and H. Bracht
Fluorine effect on As diffusion in Ge
Journal of Applied Physics 109 (2011) 113527-1(6).S. Knebel, A. Kyriakidou, H. Bracht, H. Rösner, and G. Wilde
Structural and electronic properties of sol-gel derived Ge nanocrystals in SiO2 films
Applied Physics A 103 (2011) 149-158.A. Chroneos, C.A. Londos, and H. Bracht
A-centers and isovalent impurities in germanium: Density functional theory calculations
Material Science and Engineering B 176 (2011) 453-457.H. Bracht, S. Schneider, and R. Kube
Diffusion and doping issues in germanium
Microelectronic Engineering 88 (2011) 452-457.S. Schneider and H. Bracht
Suppression of donor-vacancy complexes in germanium by concurrent annealing and irradiation
Applied Physics Letters 98 (2011) 014101-1(3).2006 to 2010
K. Sunder, M. Grofmeier, R. Staskunaite, and H. Bracht
Dynamic of network formers and modifiers in mixed cation glasses
Zeitschrift für physikalische Chemie 224 (2010) 1677-1705.A. Schirmeisen, A. Taskiran, H. Bracht, and B. Roling
Ion jump dynamics in nanoscopic subvolumes analyzed by electrostatic force spectroscopy
Zeitschrift für Physikalische Chemie 224 (2010) 1831-1852.P. Tsouroutas, D. Tsoukalas, and H. Bracht
Experiments and simulations on diffusion and activation of co-doped with arsenic and phosphorus germanium
Journal of Applied Physics 107 (2010) 024903-1(8).R. Kube, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E. E. Haller, S. Paul, and W. Lerch
Composition dependence of Si and Ge diffusion in relaxed Si1-xGex alloys
Journal of Applied Physics 107 (2010) 073520-1(6).A. Chroneos, R. Kube, H. Bracht, R.W. Grimes, and U. Schwingenschlögl
Vacancy-indium clusters in implanted germanium
Chemical Physics Letters 490 (2010) 38-40.A. Chroneos and H. Bracht
Impact of oxygen on the diffusion of silicon in germanium: Density functional theory calculations
Semiconductor Science and Technology 25 (2010) 045002-1(4).H. Bracht, S. Schneider, J.N. Klug, C.Y. Liao, J. Lundsgaard Hansen, E.E. Haller, A. Nylandsted Larsen, D. Bougeard, M. Posselt, and C. Wündisch
Interstitial-mediated diffusion in germanium under proton irradiation
Physical Review Letters 103 (2009) 255501-(4).R. Kube, H. Bracht, A. Chroneos, M. Posselt, and B. Schmidt
Intrinsic and extrinsic diffusion of indium in germanium
Journal of Applied Physics 106 (2009) 063534-1(7).A. Chroneos, C. Jiang, R.W. Grimes, U. Schwingenschlögl, and H. Bracht
E centers in ternary Si1-x-yGexSny random alloys
Applied Physics Letters 95 (2009) 112101-1(3).A. Chroneos, R.W. Grimes, and H. Bracht
Fluorine codoping in germanium to suppress donor diffusion an deactivation
Journal of Applied Physics 106 (2009) 063707-1(5).A. Chroneos, C. Jiang, R.W. Grimes, U. Schwingenschlögl, and H. Bracht
Defect interactions in Sn1-xGex random alloys
Applied Physics Letters 94 (2009) 252104-1(3).H. Bracht, S. Brotzmann, and A. Chroneos
Impact of carbon on the diffusion of donor atoms in germanium
Defect and Diffusion Forum 289-292 (2009) 689-696.K. Sunder and H. Bracht
Oxygen and silicon diffusion in silica under varying ambient conditions
Defect and Diffusion Forum 289-292 (2009) 531-539.M. Grofmeier, F.V. Natrup, and H. Bracht
Alkaline-earth diffusion in mixed cation glasses
Defect and Diffusion Forum 289-292 (2009) 615-620.A. Schmitz, H. Bracht, F. Natrup, and W. Graf
Sherardizing - galvanizing steel with zinc from the vapour phase
Best paper award of the Bodycote 2008 Prize Paper Competition
International Heat Treatment and Surface Engineering 2 (2009) 49-54F.V. Natrup, M. Grofmeier, and H. Bracht
Self- and foreign alkaline-earth diffusion in mixed cation glasses
Solid State Ionics 180 (2009) 109-115.R. Kube, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E. E. Haller, S. Paul, and W. Lerch
Simultaneous diffusion of Si and Ge in isotopically controlled Si1-xGex -heterostructures
Materials Science in Semiconductor Processing 11 (2008) 378-383.A. Chroneos, R.W. Grimes, and H. Bracht
Impact of germanium on vacancy clustering in germanium-doped silicon
Journal of Applied Physics 105 (2009) 06102-1(3).A. Chroneos, R.W. Grimes, H. Bracht, and B.P. Uberuaga
Engineering the free vacancy and active donor concentrations in donor-doped ger-manium by phosphorous and arsenic double doping
Journal of Applied Physics 104 (2008) 113724-1(4).A. Chroneos, H. Bracht, R. W. Grimes, and B. P. Uberuaga
Phosphorous clustering in germanium-rich silicon germanium
Materials Science and Engineering B 154-155 (2008) 72-75.A. Chroneos and H. Bracht
Concentration of intrinsic defects and self-diffusion in GaSb
Journal of Applied Physics 104 (2008) 093714-1(5).A. Chroneos, H. Bracht, C. Jiang, B.P. Uberuaga, and R.W. Grimes
Non-linear stability of E-centers in Si1-xGex: Electronic structure calculations
Physical Review B 78 (2008) 195201-1(7).E. Hüger, U. Tietze, D. Lott, H. Bracht, D. Bougeard, E.E. Haller, H. Schmidt
Self-diffusion in germanium isotope multilayers at low temperatures
Applied Physics Letters, 93 (2008) 162104-1(3).H. Bracht and A. Chroneos
The vacancy in silicon: A critical evaluation of experimental and theoretical results
Journal of Applied Physics 104 (2008) 076108-1(3).M. Posselt, F. Gao, and H. Bracht
Correlation between self-diffusion in Si and the migration mechanisms of vacancies and self-interstitials: An atomistic study
Physical Review B 78 (2008) 035208-1(9).H. Bracht
Diffusion and defect reactions in isotopically controlled semiconductors
Diffusion Fundamentals 8 (2008) 1.1-1.8.A. Chroneos, R. W. Grimes, B. P. Uberuaga, and H. Bracht
Diffusion and defect reactions between donors, C and vacancies in Ge. II. Atomistic calculations of related complexes
Physical Review B 77 (2008) 235208-1(7).S. Brotzmann, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E. Simoen, E. E. Haller, J. S. Christensen, and P. Werner
Diffusion and defect reactions between donors, C and vacancies in Ge. I: Experimental results
Physical Review B 77 (2008) 235207-1(13).A. Chroneos, H. Bracht, R.W. Grimes, and B.P. Uberuaga
Vacancy-mediated dopant diffusion activation enthalpies for germanium
Applied Physics Letters 92 (2008) 172103-1(3).S. Schneider, H. Bracht, M. C. Pedersen, J. Lundsgaard Hansen, and A. Nylandsted Larsen
Proton irradiation of germanium isotope multilayer structures at elevated temperatures
Journal of Applied Physics, Journal of Applied Physics, 103 (2008) 033517-1(5).S. Brotzmann and H. Bracht
Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium
Journal of Applied Physics, 103 (2008) 033508-1(7).M. Posselt, B. Schmidt, W. Anwand, R. Grötzschel, V. Heera, A. Mücklich, H. Hortenbach, S. Gennaro, M. Bersani, D. Giubertoni, A. Möller, and H. Bracht
P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation
J. Vac. Sci. Technol. B, 26 (2008) 430-434.K. Sunder, H. Bracht
Defect reactions in gallium antimonide studied by zinc and self-diffusion
Physica B 401-402 (2007) 262-265.A. Chroneos, R.W. Grimes, B.P. Uberuaga, S. Brotzmann, and H. Bracht
Vacancy-arsenic clusters in germanium
Applied Physics Letters 91 (2007) 192106.M. Grofmeier, F.V. Natrup, and H. Bracht
Barium diffusion in mixed cation glasses
Physical Chemistry Chemical Physics 9 (2007) 5822-5827.K. Sunder, H. Bracht, S.P. Nicols, and E.E. Haller
Zinc and gallium diffusion in gallium antimonide
Physical Review B 75 (2007) 245210-1(9).A. Schirmeisen, A. Taskiran, H. Fuchs, H. Bracht, S. Murugavel, and B. Roling
Fast interfacial ionic conduction in nanostructured glass ceramics
Physical Review Letters 98 (2007) 225901-1(4).H. Bracht, H.H. Silvestri, I.D. Sharp, E. E. Haller, J.L. Hansen and A. Nylandsted Larsen
Self- and foreign-atom diffusion in semiconductor isotope heterostructures - Part II: Experimental results for silicon
Physical Review B 75 (2007) 035211-1(21).H. Bracht
Self- and foreign-atom diffusion in semiconductor isotope heterostructures - Part I: Continuum theoretical calculations
Physical Review B 75 (2007) 035210-1(16).H. Bracht and S. Brotzmann
Atomic transport in germanium and the mechanism of arsenic diffusion
Materials Science in Semiconductor Processing 9 (2006) 471-476.H. Bracht
Advanced dopant and self-diffusion studies in silicon
Nuclear Instruments and Methods in Physics Research B 253 (2006) 105-112.H.H. Silvestri, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E.E. Haller
Diffusion of silicon in crystalline germanium
Semiconductor Science and Technology 21 (2006) 758-762.H. Bracht
Diffusion mediated by doping and radiation-induced point defects
Physica B 376-377 (2006) 11-18.2001 to 2005
H. H. Silvestri, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E.E. Haller
Diffusion of Silicon in Germanium
Proc. 27th Intl. Confr. on the Physics of Semiconductors (ICPS-27), July 26-30, 2004, Flagstaff, AZ; J. Menendez and C. G. Van de Walle, eds. AIP Confr. Proc. 772, 97-98 (2005).F.V. Natrup and H. Bracht
Correlation between the cation radii and the glass transition in mixed-cation silicate glasses
Phys. Chem. Glasses 46 (2005) 95-98.F. V. Natrup, H. Bracht, S. Murugavel, B. Roling
Cation diffusion and ionic conductivity in soda-lime silicate glasses
Phys. Chem. Chem. Phys. 7 (2005) 2279-2286 (selected as hot article).H. Bracht and S. Brotzmann
Zinc diffusion in gallium arsenide and the properties of gallium interstitials
Phys. Rev. B., 71 (2005) 115216 -1(10).B. Roling, A. Schirmeisen, H. Bracht, A. Taskiran, H. Fuchs, S. Murugavel, F. Natrup
Nanoscopic study of the ion dynamics in a LiAlSiO4 glass ceramic by means of electrostatic force spectroscopy
Phys. Chem. Chem. Phys. 7 (2005) 1472-1475.H. Bracht, H. H. Silvestri and E. E. Haller
Advanced diffusion studies with isotopically controlled materials
Solid State Communications, 133 (2005) 727-735H. Bracht, R. Staskunaite, E.E. Haller, P. Fielitz, G. Borchardt und D. Grambole
Silicon diffusion in sol-gel derived isotopically enriched silica glasses
Journal of Applied Physics, 97 (2005) 46107-1-3.H. Bracht
Guest Editor of the Zeitschrift für Metallkunde on the occasion of Prof. H. Mehrer's 65th Birthday
Volume 95, Oktober 2004.H. Bracht, H.H. Silvestri, I.D. Sharp, S.P. Nicols, J.W. Beeman, J.L. Hansen, A. Nylandsted Larsen, and E.E. Haller
Self- and dopant diffusion in Si isotope multilayer structures
Proceedings of the 26th International Conference on Physics of Semiconductors (Edinburgh, 2002). Institute of Physics Conference Series No 171 (2003) C3.8.A. Schirmeisen, A. Taskiran, H. Fuchs, B. Roling, S. Murugavel, H. Bracht, and F. Natrup
Probing ion transport at the nanoscale: Time-domain electrostatic force spectroscopy on glassy electrolytes
Appl. Phys. Lett. 85 (2004) 2053-2055.H. Bracht
Copper related diffusion phenomena in germanium and silicon
Mater. Sci. Semicond. Process. 7 (2004) 113-124.K. Rüschenschmidt, H. Bracht, N.A. Stolwijk, M. Laube, G. Pensl, G.R. Brandes
Self-diffusion in isotopically enriched silicon carbide and its correlation with dopant diffusion
J. Appl. Phys. 96 (2004) 1458-1463.A. Rodriguez, H. Bracht, I. Yonenaga
Impact of high B concentrations and high dislocation densities on Au diffusion in Si
J. Appl. Phys 95 (2004) 7841-7849.H. Mehrer, H. Bracht, S. Divinski, N. Stolwijk
Diffusion in Materialien
Forschungsjournal der Universität Münster, November 2003, 51-58.H. Bracht, J. Fage Pedersen, N. Zangenberg, A. Nylandsted Larsen, E.E. Haller, G. Lulli, M. Posselt
Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures
Physical Review Letters 91 (2003) 245501-1(4).H.H Silvestri, H. Bracht, I.D. Sharp, J.L. Hansen, A. Nylandsted Larsen, E.E. Haller
Simultaneous Phosphorus and Si Self-Diffusion in Extrinsic Isotopically Controlled Silicon Heterostructures
Proceedings of the 26th International Conference on Physics of Semiconductors (Edinburgh, 2002). Inst. Phys. Conf. Ser. 171 (2003) C3.8.T.A. Frewen, T. Sinno, E. Dornberger, R. Hoelzl, W. von Ammon, and H. Bracht
Global parameterization of multiple point defect dynamics models in silicon
Journal of the Electrochemical Society 150 (2003) G673-682.S. Voß, N.A. Stolwijk, H. Bracht, A. Nylandsted Larsen, H. Overhof
Substitutional Zn in SiGe: Deep level transient spectroscopy and electron density calculations
Physical Review B 68 (2003) 035208-1(9).Koeder, S. Frank, W. Schoch, V. Avrutin, W. Limmer, K. Thonke, R. Sauer, A. Waag, M. Krieger, K. Zuern, P. Ziemann, S. Brotzmann, H. Bracht
Curie temperature and carrier concentration gradient in epitaxy-grown Ga1-xMnxAs layers
Applied Physics Letters 82 (2003) 3278-3280.S. Voß, N.A. Stolwijk, and H. Bracht
Spreading-resistance profiling of silicon and germanium at variable temperature
Journal of Applied Physics 92 (2002) 4809-4819.F. Natrup, H. Bracht, C. Martiny, S. Murugavel, and B. Roling
Diffusion of calcium and barium in alkali alkaline-earth silicate glasses
Physical Chemistry Chemical Physics 4 (2002) 3225-3231.C. Martiny, S. Murugavel, B. Roling, F. Natrup, H. Bracht, and M.D. Ingram
Mobilities of divalent ions in glass
Conference Proceedings of the International Congress on Glass (Edinburgh, 2001), Glass Technol. 43C (2002) 309-314.I.D. Sharp, H. Bracht, H.H Silvestri, S.P. Nicols, J.W. Beeman, J.L. Hansen, A. Nylandsted Larsen, E.E. Haller
Self- and dopant diffusion in extrinsic boron doped isotopically controlled silicon multilayer structures
Materials Research Society Symposium Proceedings 719 (2002) F13.11.1-F13.11.6.H.H Silvestri, I.D. Sharp, H. Bracht, S.P. Nicols, J.W. Beeman, J.L. Hansen, A. Nylandsted Larsen, E.E. Haller
Dopant and self-diffusion in extrinsic n-type silicon isotopically controlled heterostructures
Materials Research Society Symposium Proceedings 719 (2002) F13.10.1-F13.10.6.P.N. Grillot, S.A. Stockman, J.-W. Huang, H. Bracht, and Y.L. Chang
Acceptor diffusion and segregation in (AlxGa1-x)0.5In0.5P heterostructures
Journal of Applied Physics 91 (2002) 4891-4899.N.A. Stolwijk and H. Bracht
Solubility and segregation of impurities and native point defects in germanium
in Semiconductors Subvolume A2α: Impurities and Defects in Groups IV Elements, IV-IV and III-V Compounds, Landolt Börnstein New Series Vol. III/41, p. 382-386 (Springer, Berlin 2002).H. Bracht and N.A. Stolwijk
Solubility, segregation and distribution coefficients of impurities and defects in silicon
in Semiconductors, Subvolume A2α: Impurities and Defects in Groups IV Elements, IV-IV and III-V Compounds, Landolt Börnstein New Series Vol. III/41, p. 77-169 (Springer, Berlin 2002).E.E. Haller and H. Bracht
Self-diffusion in isotopically controlled semiconductors
Springer Proceedings in Physics 87 (2001) 1373-1376.B. Jahnen, M. Luysberg, K. Urban, H. Bracht, R. Schmidt, C. Ungermanns, and T. Bleuel
Interdiffusion in GaSb/AlxGa1-xSb heterostructures
IInst. Phys. Conf. Ser. No 169 (2001) 205-210.S.P. Nicols, H. Bracht, M. Benamara, Z. Liliental-Weber and E.E. Haller
Mechanism of zinc diffusion in gallium-antimonide
Physica B 308-310 (2001) Phonon spectroscopy of defects correlated with the diffusion of Zn into Si, 854-857.H. Bracht, M.S. Norseng, E.E. Haller, and K. Eberl
Zn-diffusion enhanced Ga diffusion in GaAs isotope heterostructures
Physica B 308-310 (2001) 831-834.K. Rüschenschmidt, H. Bracht, M. Laube, N.A. Stolwijk, and G. Pensl
Diffusion of boron in silicon carbide
Physica B 308-310 (2001) 734-737.H. Bracht, S.P. Nicols, E.E. Haller, J.P. Silveira, and F. Briones
Self-diffusion in 69Ga121Sb/71Ga123Sb isotope heterostructures
Journal of Applied Physics 89 (2001) 5393-5399.S. Voß, H. Bracht, and N.A. Stolwijk
High-temperature spreading-resistance profiling for the characterization of impurity distributions in n-type silicon
Material Science in Semiconductor Processing 4 (2001) 67-70.H. Bracht, N.A. Stolwijk, M. Laube, and G. Pensl
Modelling of boron diffusion in silicon carbide
Materials Science Forum 353-356 (2001) 327-330.H. Bracht
Atomic mechanims of mass transport in elemental and compound semiconductors
Habilitationsschrift, Westfälische Wilhelms-Universität Münster (2001).1996 to 2000
H. Bracht
Self- and foreign atom diffusion mechanisms in silicon
Proceeding of the 3rd International Symposium on Advanced Science and Technology of Silicon Materials (2000) 49-58.H. Bracht, N.A. Stolwijk, M. Laube, and G. Pensl
Diffusion of boron in silicon carbide: Evidence for the kick-out mechanism
Applied Physics Letters 77 (2000) 3188-3190.H. Bracht, S.P. Nicols, W. Walukiewicz, J.P. Silveira, F. Briones, and E.E. Haller
Large disparity between gallium and antimony self-diffusion in gallium antimonide
NATURE 408 (2000) 69-72.A. Giese, N.A. Stolwijk, and H. Bracht
Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information
Applied Physics Letters 77 (2000) 642-644.A. Giese, N.A. Stolwijk, and H. Bracht
Short time diffusion of copper and nickel into germanium wafers: special backside boundary conditions for studying vacancy properties
Advances in Science and Technology (eds. P. Vincenzini, V. Buscaglia) 29, Part A (2000) 515-523.H. Bracht and E.E. Haller
Comment on Self-diffusion in Silicon: Similarity between the Properties of Native Point Defects published by Ural et al. Phys. Rev. Lett. 83 (1999) 3454
Physical Review Letters 85 (2000) 4835.H. Schroth, K. Laßmann, S. Voß, and H. Bracht
Extreme eduction of the spin-orbit splitting of the deep acceptor ground state of Zns- in Si
Physical Review Letters 85 (2000) 417-420.H. Bracht
Diffusion mechanisms and intrinsic point-defect properties in silicon
MRS Bulletin on Defects and Diffusion in Silicon Technology 25 (6) (2000) 22-27.A. Giese, H. Bracht, N.A. Stolwijk, and D. Baither
Microscopic defects in silicon induced by zinc out-diffusion
Material Science and Engineering B 71 (2000) 160-165.H. Bracht
Diffusion in isotopically controlled semiconductor systems
Physica B 273-274 (1999) 981-986.S. Voß, H. Bracht, and N.A. Stolwijk
Low-temperature spreading-resistance profiling for the characterization of impurity distributions in germanium
Physica B 273-27 Phonon spectroscopy of defects correlated with the diffusion of Zn into Si, 4 (1999) 561-564.W. Gehlhoff, A. Näser, and H. Bracht
PR proof of the negatively charged acceptor state Zn- in silicon
Physica B 273-274 (1999) 264-267.H. Bracht, M. Norseng, E.E. Haller, K. Eberl, and M. Cardona
Enhanced and retarded Ga self-diffusion in Si and Be doped GaAs isotope heterostructures
Solid State Communications 112 (1999) 301-314.A. Masuhr, H. Bracht, N.A. Stolwijk, H. Overhof, and H. Mehrer
Point defects in silicon after zinc diffusion - a deep level transient spectroscopy and spreading resistance profiling study
Semiconductor Science and Technology 14 (1999) 435-440.H. Bracht
Native point defects in silicon
Proceeding Electrochemical Society 99-1 (1999) 357-371; Extended Abstracts 99-1 (1999) 345.H. Bracht, E.E. Haller, K. Eberl, and M. Cardona
Self- and interdiffusion in AlXGa1-XAs/GaAs isotope heterostructures
Applied Physics Letters 74 (1999) 49-51.H. Schroth, K. Laßmann, Chr. Borgmann, and H. Bracht
Nonlinear Zeeman splitting of the Si:Bes- Acceptor Ground State: Influence of the p1/2 Split-off Valence Band
Physica Status Solidi (b) 210 (1998) 747-751.S. Voß, H. Bracht, N.A. Stolwijk, P. Kringhoj and A. Nylandsted Larsen
Energy levels of Zn in Si1-xGex alloys: The change-over from highly localized deep states to shallow level centers
Physica Status Solidi (b) 210 (1998) 771-775.A. Giese, H.Bracht, J.T. Walton, N.A. Stolwijk
Properties of vacancies in silicon determined by out-diffusion of zinc from silicon
Materials Research Society Symposium Proceedings 527 (1998) 395-400.H. Bracht, E.E. Haller, K.Eberl, M. Cardona, and R. Clark-Phelps
Self-diffusion in isotopically controlled heterostructures of elemental and compound semiconductors
Materials Research Society Symposium Proceedings 527 (1998) 335-346.H. Bracht, W. Walukiewicz, and E.E. Haller
Modeling of atom diffusion and segregation in semiconductor heterostructures
Materials Research Society Symposium Proceedings 490 (1998) 93-98.S. Voß, H. Bracht, N.A. Stolwijk, P. Kringhoj and A. Nylandsted Larsen
Energy levels of Zn in Si1-xGex alloys
Applied Physics Letters 73 (1998) 2331-2333.H. Bracht, E.E. Haller, and R. Clark-Phelps
Silicon self-diffusion in isotope heterostructures
Physical Review Letters 81 (1998) 393-396.A. Giese, H. Bracht, N.A. Stolwijk, and J.T. Walton
Out-diffusion of Zn from Si: a method to study vacancy properties in Si
Journal of Applied Physics 83 (1998) 8062-8064.N.A. Stolwijk and H. Bracht
Diffusion in Silicon, Germanium and their alloys: Diffusion in Semiconductors and Non-Metallic Solids
Subvolume A: Diffusion in Semiconductors, Landolt Börnstein New Series Vol. III/33 (Springer, Berlin 1998) p. 1-257.H. Mehrer, C. Herzig, N. A. Stolwijk and H. Bracht
Editors of the DIMAT-96 Conference Proceedings
Diffusion in Materials, Defect and Diffusion Forum 143-147 (1997).H. Schroth, K. Laßmann, Chr. Borgmann, and H. Bracht
Electric-dipole spin resonance of Be-doped silicon
Materials Science Forum 258-263 (1997) 417-422.H. Bracht, A. Rodriguez Schachtrup, and I. Yonenaga
Segregation of gold at dislocations confirmed by gold diffusion into highly dislocated silicon
Materials Science Forum 258-263 (1997) 1783-1788.H. Bracht and A. Rodriguez Schachtrup
Diffusion of gold into heavily boron-doped silicon
Materials Research Society Symposium Proceedings 469 (1997) 25-36.H. Bracht
Fast metal diffusion in silicon under intrinsic and extrinsic doping conditions
Defect and Diffusion Forum 143-147 (1997) 979-992.A. Giese, H. Bracht, N.A. Stolwijk, and H. Mehrer
Diffusion of nickel and zinc in germanium
Defect and Diffusion Forum 143-147 (1997) 1059-1064.A. Rodriguez Schachtrup, H. Bracht, H. Mehrer, and I. Yonenaga
Diffusion of gold into plastically deformed undoped and boron-doped silicon
Defect and Diffusion Forum 143-147 (1997) 1021-1026.S. Voß, H. Bracht, N.A. Stolwijk, and H. Mehrer
Electronic properties of Zn in Si1-xGex alloys: A basis for studying Zn diffusion in SiGe
Defect and Diffusion Forum 143-147 (1997) 1141-1146.H. Schroth, K. Laßmann and H. Bracht
Electric-dipole spin resonance of zinc-related defects in silicon
The Physics of Semiconductors, ed. by M. Scheffler and R. Zimmermann (World Scientific, Singapore), 4 (1996) 2725.H. Bracht and H. Overhof
Kinetics of interstitial-substitutional exchange of Zn, Pt, and Au in Si: experimental results and theoretical calculations
Physica Status Solidi (a) 158 (1996) 47-55.1989 to 1995
N.A. Stolwijk, W. Lerch, and H. Bracht
Rapid thermal annealing: a tool for studying diffusion processes in semiconductors
Proceedings of the 3rd International Rapid Thermal Processing Conference RTP'95 (Amsterdam, 1995) 71-78.H. Bracht, N.A. Stolwijk, and H. Mehrer
Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions
Physical Review B 52 (1995) 16542-16560.H. Schroth, R. App, A. Köpf, K. Laßmann, H. Bracht, and N.A. Stolwijk
Electric-dipole spin resonance of defects correlated with the diffusion of zinc into silicon
Materials Science Forum 196-201 (1995) 1601-1606.H. Bracht, N.A. Stolwijk, and H. Mehrer
Equilibrium concentrations of intrinsic point defects in silicon determined by zinc diffusion
Proceeding Electrochemical Society 94-10 (1994) 593-602B; Extended Abstracts 94-1 (1994) 724-725.H. Bracht, N.A. Stolwijk, and H. Mehrer
Thermodynamic properties of self-interstitials in silicon: and experimental investigation
Materials Science Forum 143-147 (1994) 785-789.J. Staiger, P. Groß, K. Laßmann, H. Bracht, and N.A. Stolwijk
Phonon spectroscopy of defects correlated with the diffusion of Zn into Si
Materials Science Forum 143-147 (1994) 675-679.N.A. Stolwijk, H. Bracht, H.-G. Hettwer, W. Lerch, H. Mehrer, A. Rucki, and W. Jäger
Defect injection and diffusion in semiconductors
Materials Science Forum 155-156 (1994) 475-492.H. Bracht
Kurzzeitdiffusion von Zink in Silizium zur Charakterisierung der atomaren Gitterfehler
Doktorarbeit, Westfälische Wilhelms-Universität Münster (1993).H. Bracht, N.A. Stolwijk, H. Mehrer, and I. Yonenaga
Interstitial-substitutional diffusion kinetics and dislocation-induced trapping of zinc in plastically deformed silicon
Physica Status Solidi (a) 137 (1993) 499-514.H. Bracht, N.A. Stolwijk, H. Mehrer, and I. Yonenaga
Short time diffusion of zinc in silicon for the study of intrinsic point defects
Applied Physics Letters 59 (1991) 3559-3561.H. Bracht, N.A. Stolwijk, and H. Mehrer
Diffusion of copper, silver, and gold in germanium
Physical Review B 43 (1991) 14465-14477.A. Almazouzi, J. Bernardini, E.G. Moya, H. Bracht, N.A. Stolwijk, and H. Mehrer
Diffusion, solubility and thermodynamic properties of gold in solid germanium studied by means of radiotracer and spreading-resistance analysis
Journal of Applied Physics 70 (1991) 1345-1354.N.A. Stolwijk, F. Wenwer, H. Bracht, and H. Mehrer
Vacancy-mediated interstitial-substitutional diffusion in semiconducting and metallic matrices
Diffusion in Materials, ed. by A. Laskar et al., NATO ASI Series E- 179 (Kluwer, Dordrecht 1990) p. 297-304.H. Bracht
Untersuchung der Diffusion von Kupfer, Silber und Gold in Germanium
Diplomarbeit Westfälische Wilhelms-Universität Münster (1989).