Publications - AG Pollmann/Krüger
© Mister Vertilger / Photocase.com

  • 2014 - 2000

    1. J. Pollmann, X. Peng, J. Wieferink, and P. Krüger
      Adsorption of hydrogen and hydrocarbon molecules on SiC(001)
      Surface Science Reports 69, 55 (2014)
    2. F. Huerkamp, P. Krüger, and J. Pollmann
      Investigation of electron transmission through Co/C/Co magnetic tunnel junctions
      Phys. Rev. B 89, 125302 (2014)
    3. C. Sommer, P. Krüger, and J. Pollmann
      Optical spectra of alkali-metal fluorides
      Phys. Rev. B 86, 155212 (2012)
    4. C. Sommer, P. Krüger, and J. Pollmann
      Quasiparticle band structure of alkali-metal fluorides, oxides, and nitrides
      Phys. Rev. B 85, 165119 (2012)
    5. C. Wieferink, P. Krüger, and J. Pollmann
      Influence of tip structure on tip-sample interaction forces at the KBr(001) surface: Results from ab initio investigations
      Phys. Rev. B 84, 195402 (2011)
    6. B. Stärk, P. Krüger, and J. Pollmann
      Magnetic anisotropy of thin Co and Ni films on diamond surfaces
      Phys. Rev. B. 84, 195316 (2011)
    7. C. Wieferink, P. Krüger, and J. Pollmann
      Simulations of friction force microscopy on the KBr(001) surface based on ab initio calculated tip-sample forces
      Phys. Rev. B 83, 235328 (2011)
    8. J. Wieferink, P. Krüger, and J. Pollmann
      Ab-initio study of atomic hydrogen diffusion on the clean and hydrogen-terminated Si(001) surface
      Phys. Rev. B 82, 075323 (2010)
    9. B. Stärk, P. Krüger, and J. Pollmann
      Magnetic Properties of Co and Ni Multilayers on Diamond Surfaces
      Proceedings of NIC Symposium, 24-25 February 2010, FZ-Jülich, p. 207 (2010)
    10. B. Stärk, P. Krüger, and J. Pollmann
      Cobalt multilayers on diamond surfaces: An ab-initio study
      Phys. Rev. B 81, 035321 (2010)
    11. B. Baumeier, P. Krüger, and J. Pollmann
      First-principles investigation of the atomic and electronic structure of the 4H-SiC(1102)-c(2x2) surface
      Phys. Rev. B 78, 145318 (2008)
    12. J. Wieferink, P. Krüger, and J. Pollmann
      First-principles study of benzene adsorption on the SiC(001)-(3x2) surface
      Phys. Rev. B 78, 165315 (2008)
    13. B. Baumeier, P. Krüger, J. Pollmann, and G. Vajenine
      Electronic structure of alkali-metal fluorides, oxides and nitrides: Density-functional calculations including self-interaction corrections
      Phys. Rev. B 78, 125111 (2008)
    14. P. Krüger, B. Baumeier, and J. Pollmann
      First-Principles Investigation of an Epitaxial Silicon Oxynitride Layer on a 6H-SiC(0001) Surface
      Phys. Rev. B 77, 085329 (2008)
    15. X. Peng, P. Krüger, and J. Pollmann
      Adsorption processes of hydrogen molecules on SiC(001), Si(001), and C(001) surfaces
      New Journal of Physics 10, 125028 (2008)
    16. M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
      Desorption force on hydrogen atoms from resonant excitations of the H:Si(001)-(2x1) surface
      Surf. Sci. 602, 3208 (2008)
    17. B. Baumeier, P. Krüger, and J. Pollmann
      Bulk and surface electronic structure of alkaline-earth metal oxides: Bound surface and image-potential states from first principles
      Phys. Rev. B 76, 205404 (2007)
    18. X. Peng, P. Krüger, and J. Pollmann
      Hydrogenated SiC(001)-(3x2) surface: Semiconducting and metallic structures
      Phys. Rev. B 76, 125303 (2007)
    19. B. Baumeier, P. Krüger, and J. Pollmann
      Structural, elastic, and electronic properties of SiC, BN, and BeO nanotubes
      Phys. Rev. B 76, 085407 (2007)
    20. J. Wieferink, P. Krüger, and J. Pollmann
      First-principles study of acetylene adsorption on b-SiC(001)-(3x2)
      Phys. Rev. B 75, 153305 (2007)
    21. X. Peng, P. Krüger, and J. Pollmann
      Why thermal H2 molecules adsorb on SiC(001)-c(4-2) and not on SiC(001)-(3x2) at room temperature
      Phys. Rev. B 75, 073409 (2007)
    22. J. Pollmann
      There is plenty of room for new structures at the bottom
      Surf. Sci. 601, 883-884 (2007)
    23. B. Baumeier, P. Krüger, and J. Pollmann
      Atomic and electronic structure of BeO and the BeO(1010) surface: An ab initio investigation
      Phys. Rev. B 75, 045323 (2007)
    24. J. Wieferink, P. Krüger, and J. Pollmann
      Improved hybrid algorithm with Gaussian basis sets and plane waves: First-principles calculations of ethylene adsorption on β-SiC(001)-(3x2)
      Phys. Rev. B 74, 205311 (2006)
    25. N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
      Electronic excitations of the H:Si(001)-(2x1) monohydride surface
      Phys. Rev. B 74, 155405 (2006)
    26. X. Peng, J. Wieferink, P. Krüger, and J. Pollmann
      Structural and Electronic Properties of Clean and Adsorbate-Covered (001) Surfaces of Cubic SiC
      Proceedings of NIC Symposium, 1-2 March 2006, p. 135, FZ-Jülich (2006)
    27. X. Peng, P. Krüger and J. Pollmann
      Hydrogen-induced metallization of the 3C-SiC(001)-(3x2) surface
      Surf. Sci. 600, 3564 (2006)
    28. J. Wieferink, P. Krüger, and J. Pollmann
      First-principles study of acetylene and ethylene adsorption on β-SiC(001)-(2x1)
      Phys. Rev. B 73, 115309 (2006)
    29. B. Baumeier, P. Krüger, and J. Pollmann
      Self-interaction-corrected pseudopotentials for silicon carbide
      Phys. Rev. B 73, 195205 (2006)
    30. P. Krüger, and J. Pollmann
      Generalized reconstruction model of SiC(001)-(nx2) surfaces and Si ad-dimer nanostrings
      Phys. Rev. B 73, 035327 (2006)
    31. M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
      Dynamics of excited electronic states at clean and adsorbate-covered insulator surface
      Surf. Sci. 593, Issues 1-3, p. 19-25 (2005)
    32. X. Peng, P. Krüger, and J. Pollmann
      Metallization of the 3C-SiC(001)-(3x2) surface induced by hydrogen adsorption: A first-principles investigation
      Phys. Rev. B 72, 245320 (2005)
    33. N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
      Femtosecond dynamics of excited states of CO adsorbed on MgO(001)-(1x1)
      Phys. Rev. B 71, 045407 (2005)
    34. A. Mazur, and J. Pollmann
      Surface phonons of D:C(001)-(2x1)
      J. Phys. Chem. 108, 14570 (2004)
    35. J. Pollmann, and P. Krüger
      Reconstruction of cubic SiC surfaces
      J. Phys.: Condens. Matter 16, S1659 - S1703 (2004)
    36. N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
      Fast Initial Decay of Molecular Excitations at Insulator Surfaces
      Phys. Rev. Lett. 92, 216805 (2004)
    37. U. Freking, P. Krüger, A. Mazur, and J. Pollmann
      Surface phonons of Si(001)-(1x1) dihydride
      Phys. Rev. B 69, 035315 (2004)
    38. J. Pollmann and P. Krüger
      Green Functions in the Theory of Semiconductor Surfaces
      Prog. Surf. Sci. 74, 269 (2003)
    39. M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
      Image States and Excitons at Insulator Surfaces with Negative Electron Affinity
      Phys. Rev. Lett. 91, 256802 (2003)
    40. N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
      Electronic excitations of CO adsorbed on MgO(001)
      Appl. Phys. A 78, 213 (2003)
    41. S. Thachepan, H. Okuyama, T. Aruga, M. Nishijima, T. Ando, A. Mazur, and J. Pollmann
      Surface phonons of C(001)(2x1)-H
      Phys. Rev. B 68, 041401(R) (2003)
    42. F. Sökeland, M. Rohlfing, P. Krüger, and J. Pollmann
      Density functional and quasiparticle band-structure calculations for GaxAl1-xN and GaxIn1-xN alloys
      Phys. Rev. B 68, 075203 (2003)
    43. N.-P. Wang, M. Rohlfing, P. Krüger and J. Pollmann
      Quasiparticle band structure and optical spectrum of LiF(001)
      Phys. Rev. B 67, 115111 (2003)
    44. Fu-He Wang, P. Krüger and J. Pollmann
      First principles investigation of the C-terminated β-SiC(001)-c(2x2) surface
      Phys. Rev. B 66, 195335 (2002)
    45. M. Rohlfing and J. Pollmann
      Localization of Optically Excited States by Self-Trapping
      Phys. Rev. Lett. 88, 176801 (2002)
    46. J. Pollmann, P. Krüger, A. Mazur and M. Rohlfing
      Electrons, Phonons and Excitons at Semiconductor Surfaces
      Festkörperprobleme/Advances in Solid State Physics, Springer Verlag, Heidelberg (2002), pp. 189-206
    47. Fu-He Wang, P. Krüger, and J. Pollmann
      Surface electronic structure of GaN(0001)-(1x1): Comparison between theory and experiment
      Surf. Sci. 499, Issues 2-3, p. 193-202 (2002)
    48. U. Freking, A. Mazur and J. Pollmann
      Structural and vibronic properties of the dihydride-terminated Si(001) surface
      in High Performance Computing in Science and Engineering 2001, ed. by E. Krause and W. Jäger, Springer Verlag, Berlin (2002), pp. 202-209
    49. C. Kreis, S. Werth, R. Adelung, L. Kipp, M. Skibowski, D. Voß, P. Krüger, A. Mazur and J. Pollmann
      Surface resonances at transition metal dichalcogenide heterostructures
      Phys. Rev. B 65, 153314 (2002)
    50. U. Freking, A. Mazur and J. Pollmann
      Surface phonons of S:Si(001)-(1x1)
      Phys. Rev. B 64, 245341 (2001)
    51. Fu-He Wang, P. Krüger, and J. Pollmann
      Electronic structure of 1x1 GaN(0001) and GaN(0001) surfaces
      Phys. Rev. B 64, 035305 (2001)
    52. K. Rossnagel, O. Seifarth, L. Kipp, M. Skibowski, D. Voß, P. Krüger, A. Mazur and J. Pollmann
      Fermi surface of 2H-NbSe2 and its implications on the charge-density-wave mechanism
      Phys. Rev. B 64, 235119 (2001)
    53. K. Rossnagel, L. Kipp, M. Skibowski, C. Solterbeck, T. Strasser, W. Schattke, D. Voß, P. Krüger, A. Mazur and J. Pollmann
      Three-dimensional Fermi surface determination by ARPES
      Phys. Rev. B 63, 125104 (2001)
    54. U. Freking, A. Mazur and J. Pollmann
      Electronic, structural and vibrational properties of chalcogenides on Si(001) and Ge(001) surfaces
      in High Performance Computing in Science and Engineering 2000, ed. by E. Krause and W. Jäger, Springer Verlag, Berlin (2001), pp. 128-142
    55. M. Rohlfing and J. Pollmann
      Dielectric function and reflectivity spectrum of SiC polytypes
      Phys. Rev. B 63, 125201 (2001)
    56. Th. Böker, R. Severin, A. Müller, C. Janowitz, R. Manzke, D. Voß, P. Krüger, A. Mazur and J. Pollmann
      Band structures of MoS2, MoSe2 and MoTe2: Angular-resolved photoelectron spectroscopy in the constant-final-state mode and ab-initio calculations
      Phys. Rev. B 64, 235305 (2001)
    57. R. Kucharczyk, U. Freking, P. Krüger and J. Pollmann
      Electronic properties of AlGaAs-based biperiodic superlattices via pseudopotential calculations
      Surf. Sci. 482-485, 612 (2001)
    58. U. Freking, A. Mazur and J. Pollmann
      Vibronic studies of adsorbate-covered semiconductor surfaces with the help of high performance computing
      in High Performance Computing in Science and Engineering '99, ed. by E. Krause and W. Jäger, Springer Verlag, Berlin (2000), pp. 149-162
    59. J. Pollmann and P. Krüger
      Electronic Structure of Semiconductor Surfaces
      Chapter 2, in Handbook of Surface Science, Elsevier Science B.V. (2000), pp. 96-208
    60. W. Lu, P. Krüger, and J. Pollmann
      Atomic and electronic structure of silicate adlayers on polar hexagonal SiC surfaces
      Phys. Rev. B 61, 13737-13744 (2000)
    61. C. Stampfl, Ch. Van de Walle, D. Vogel, P. Krüger, and J. Pollmann
      Native defects and impurities in InN: First-principles studies using the local-density approximation and self- interaction and relaxation-corrected pseudopotentials
      Phys. Rev. B 61, R7846 (2000)
    62. W. Lu, P. Krüger, and J. Pollmann
      Ab-initio studies of the b-SiC(001)-(5x2) surface
      Phys. Rev. B 61, 2680 (2000)
    63. M. Rohlfing and J. Pollmann
      Calculation of the U Parameter of the Mott-Hubbard Insulator 6H-SiC(0001)-(√3x√3)
      Phys. Rev. Lett. 84, 135 (2000)
    64. J. Pollmann, P. Krüger and W. Lu
      Theory of Structural and Electronic Properties of Cubic SiC Surfaces
      Materials Science Forum 338-342, 369 (2000)
    65. W. Lu, P. Krüger and J. Pollmann
      Ab initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√3 x √3)-R30° Reconstruction
      Materials Science Forum 338-342, 349 (2000)

     

  • 1999 - 1990

    1. D. Voß, P. Krüger, A. Mazur, and J. Pollmann
      Atomic and electronic structure of WSe2 from ab-initio theory: Bulk crystal and thin film systems
      Phys. Rev. B 60, 14311 (1999)
    2. W. Lu, P. Krüger, and J. Pollmann
      Atomic and electronic structure of β-SiC(001)-(3x2)
      Phys. Rev. B 60, 2495 (1999)
    3. J. Neuhausen, V. K. Evstaf'iev, Th. Block, E. W. Finckh, W. Tremel, L. Augustin, H. Fuchs, D. Voß, P. Krüger, A. Mazur, and J. Pollmann
      Scanning probe microscopy study of the metal-rich layered chalcogenides TaM2Te2 (M = Co, Ni)
      Chem. Mater. 10 (12), pp. 38703878 (1998)
    4. W. Lu, P. Krüger, and J. Pollmann
      Missing-row asymmetric-dimer reconstruction of SiC(001)- c(4x2)
      Phys. Rev. Lett. 81, 2292 (1998)
    5. D. Vogel, P. Krüger, and J. Pollmann
      Ab-initio electronic structure calculations of silver halides with SIRC pseudopotentials
      Phys. Rev. B 58, 3865 (1998)
    6. V. Gräschus, A. Mazur, P. Krüger and J. Pollmann
      Surface phonons of As:Si(111)-(1x1) and As:Si(001)- (2x1)
      Phys. Rev. B 57, 13175 (1998)
    7. A. Glebov, J. P. Toennies, S. Vollmer, S. A. Safron, J. G. Skofronik, V. Gräschus, A. Mazur, and J. Pollmann
      Phonon dynamics of the deuterated C(111)-(1x1) surface: Experiment and theory
      Phys. Rev. B 57, 10082 (1998)
    8. M. Rohlfing, P. Krüger, and J. Pollmann
      Role of semicored electrons in quasiparticle band- structure calculations
      Phys. Rev. B 57, 6485 (1998)
    9. D. Vogel, P. Krüger, and J. Pollmann
      Ab-initio calculations of CdS, CdSe and CdTe surfaces
      Surf. Sci. 402-404, 774 (1998)
    10. G. Hirsch, P. Krüger, and J. Pollmann
      Surface passivation of GaAs(001) by sulfur: ab-initio studies
      Surf. Sci. 402-404, 778 (1998)
    11. K. Würde, P. Krüger, A. Mazur, and J. Pollmann
      First-principles investigations of the atomic and electronic structure of Pb, Sn and Ge adsorbed on the Ge(111)-(√3 x √5) surface
      Surface Review and Letters 5, 105 (1998)
    12. M. Sabisch, P. Krüger, A. Mazur, and J. Pollmann
      Structure of 6H-SiC(0001) surfaces from ab-initio calculations
      Surface Review and Letters 5, 199 (1998)
    13. M. Rohlfing, P. Krüger, and J. Pollmann
      Quasiparticle calculations of semicore states in Si, Ge, and CdS
      Phys. Rev. B 56, R7065 (1997)
    14. M. Rohlfing, P. Krüger, and J. Pollmann
      Quasiparticle calculations of surface core-level shifts
      Phys. Rev. B 56, 2191 (1997)
    15. J. Pollmann, P. Krüger, and M. Sabisch
      Atomic and electronic structure of SiC surfaces from ab-initio calculations
      phys. stat. sol. (b) 202, 421 (1997)
    16. A. Mazur, B. Sandfort, V. Gräschus, and J. Pollmann
      Phonons at Hydrogen-Terminated Si and Diamond Surfaces
      in: 'Festkörperprobleme/Advances in Solid State Physics', Vol. 36, Vieweg, 1997, p. 181
    17. V. Gräschus, A. Mazur, and J. Pollmann
      Surface phonons of H:Si(110)-(1x1)
      Phys. Rev. B 56, 6482 (1997)
    18. D. Vogel, P. Krüger, and J. Pollmann
      Structural and electronic properties of group III- nitrides
      Phys. Rev. B 55, 12836 (1997)
    19. M. Sabisch, P. Krüger, and J. Pollmann
      Ab-initio calculations of structural and electronic properties of 6H-SiC(0001) surfaces
      Phys. Rev. B 55, 10561 (1997)
    20. D. Vogel, P. Krüger, and J. Pollmann
      New pseudopotentials for II-VI semiconductors
      in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
      World Scientific, 1996, p. 617
    21. M. Sabisch, P. Krüger, A. Mazur, and J. Pollmann
      Electronic structure of 6H-SiC(0001) surfaces
      in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
      World Scientific, 1996, p. 819
    22. M. Rohlfing, P. Krüger, and J. Pollmann
      Quasiparticle calculations for bulk semiconductors and their surfaces
      in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
      World Scientific, 1996, p. 297
    23. P. Krüger and J. Pollmann
      Initial stages of carbon adsorption at the H:C(001) surface
      in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
      World Scientific, 1996, p. 947
    24. V. Gräschus, A. Mazur, and J. Pollmann
      Surface phonons of H:Si(001)-(2x1) monohydride in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
      World Scientific, 1996, p. 931
    25. J. Pollmann, P. Krüger, M. Rohlfing, M. Sabisch, and D. Vogel
      Ab-initio calculations of structural and electronic properties of prototype surfaces of group IV, III-V and II-VI semiconductors
      Appl. Surf. Science 104/105, 1 (1996)
    26. V. Gräschus, A. Mazur, and J. Pollmann
      Surface phonons of D:Si(111)-(1x1)
      Surf. Sci. 368, 179 (1996)
    27. Rohlfing, P. Krüger, and J. Pollmann
      Quasiparticle band structures of clean, hydrogen- and sulfur-terminated Ge(001) surfaces
      Phys. Rev. B 54, 13759 (1996)
    28. B. Sandfort, A. Mazur, and J. Pollmann
      Surface phonons of hydrogen-terminated semiconductor surfaces: III. Diamond (001) monohydride and dihydride
      Phys. Rev. B 54, 8605 (1996)
    29. D. Vogel, P. Krüger, and J. Pollmann
      Self-interaction and relaxation-corrected pseudopotentials for II-VI semiconductors
      Phys. Rev. B 54, 5495 (1996)
    30. M. Sabisch, P. Krüger, A. Mazur, M. Rohlfing, and J. Pollmann
      First-principles calculations of β-SiC(001) surfaces
      Phys. Rev. B 53, 13121 (1996)
    31. M. Rohlfing, P. Krüger and J. Pollmann
      Quasiparticle Band Structure of CdS
      Phys. Rev. Lett. 75, 3489 (1995)
    32. M. Rohlfing, P. Krüger and J. Pollmann
      Metallic nature of the symmetric dimer model of Si(001)-(2x1)
      Phys. Rev. B 52, 13753 (1995)
    33. D. Vogel, P. Krüger and J. Pollmann
      Ab initio electronic-structure calculations for II-VI semiconductors using self-interaction-corrected pseudopotentials
      Phys. Rev. B 52, R 14316 (1995)
    34. M. Rohlfing, P. Krüger and J. Pollmann
      Efficient scheme for GW quasiparticle bandstructure calculations with applications to bulk Si and to the Si(001)-(2x1) surface
      Phys. Rev. B 52, 1905 (1995)
    35. M. Sabisch, P. Krüger and J. Pollmann
      Ab initio calculations of SiC(110) and GaAs(110) surfaces: A comparative study and the role of ionicity
      Phys. Rev. B 51, 13367 (1995)
    36. J. Che, A. Mazur and J. Pollmann
      Structural and elctronic properties during the initial stages of Ge-GaAs(110) interface formation
      Phys. Rev. B 51, 14470 (1995)
    37. P. Krüger and J. Pollmann
      Dimer Reconstruction of Diamond, Si and Ge(001) surfaces
      Phys. Rev. Lett. 74, 1155 (1995)
    38. B. Sandfort, A. Mazur and J. Pollmann
      Vibrational correlation functions of hydrogen- terminated C(111)-(1x1) and Si(111)-(1x1) surfaces.
      Phys. Rev. B 51, 7168 (1995)
    39. B. Sandfort, A. Mazur and J. Pollmann
      Surface phonons of hydrogen-terminated semiconductors surfaces: The H:C(111)-(1x1) surface
      Phys. Rev. B 51, 7150 (1995)
    40. B. Sandfort, A. Mazur and J. Pollmann
      Surface phonons of hydrogen-terminated semiconductors surfaces: The H:Si(111)-(1x1) surface
      Phys. Rev. B 51, 7139 (1995)
    41. P. Krüger and J. Pollmann
      Theory of adsorption: Ordered monolayers from Na to Cl on Si(001) and Ge(001)
      Appl. Phys. A 59, 487 (1994)
    42. P. Schröer, P. Krüger, and J. Pollmann
      Selfconsistent electronic structure calculations of the surfaces of the wurtzite compounds ZnO and CdS
      Phys. Rev. B 49, 17092 (1994)
    43. P. Krüger and J. Pollmann
      Bond Length of Ge Dimers at Si(001)
      Phys. Rev. Lett. 72, 1130 C (1994)
    44. B. Sandfort, A. Mazur, and J. Pollmann
      Surface Phonons of H:Si(111)-(1x1)
      Proceedings of ICFSI-4, World Scientific, Singapore, 1994, p. 158
    45. P. Schröer, P. Krüger, and J. Pollmann
      First-Principles Atomic and Electronic Structure Calculations of the ZnO Surface
      Proceedings of ICFSI-4, World Scientific, Singapore, 1994, p. 85
    46. P. Krüger and J. Pollmann
      Dimer Formation and Electronic Properties of ordered Adlayers at Si(001): Results From Local Density Theory
      Proceedings of the 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI-4), ed. by B. Lengeler, H. Lüth, W. Mönch and J. Pollmann, (World Scientific, Singapore, 1994) p. 108
    47. K. Würde, A. Mazur and J. Pollmann
      Surface electronic structure of Pb(001), Pb(110), and Pb(111)
      Phys. Rev. B 49, 7679 (1994)
    48. W. Aulbur, J. Mählmann, M. Tondera and J. Pollmann
      Variational pair theory of the attractive and extended Hubbard model in d-dimensions
      Z. Phys. B 93, 219 (1994)
    49. P. Schröer, P. Krüger, and J. Pollmann
      Ab initio calculations of the electronic structure of the wurtzite compounds CdS and CdSe
      Phys. Rev. B 48, 18264 (1993)
    50. M. Rohlfing, P. Krüger, and J. Pollmann
      Quasiparticle band-structure calculations for C, Si, Ge, GaAs and SiC using Gaussian-orbital basis sets
      Phys. Rev. B 48, 17791 (1993)
    51. K. Würde, A. Mazur and J. Pollmann
      Electronic Structure of Aluminium Surfaces. Results from Empirical Tight-Binding Scattering Theory
      phys. stat. sol. (b) 179 (2), 399 (1993)
    52. P. Schröer, P. Krüger and J. Pollmann
      First-principles Electronic Structure of the Wurtzite Semiconductors ZnO and ZnS
      Phys. Rev. B 47, 6971 (1993)
    53. P. Krüger and J. Pollmann
      Chemical Trends in Adsorption on Semiconductor Surfaces: Results from Local Density Theory
      Proceedings of the 16th Int. Seminar on Surface Physics, Kudowa, Poland 1992; Progress in Surface Science, 42, 351 (1993)
    54. P. Krüger and J. Pollmann
      Ab-Initio Calculations of Si, As, S, Se and Cl Adsorption on Si(001) Surfaces
      Phys. Rev. B 47, 1898 (1993)
    55. J. Pollmann, P. Krüger and A. Mazur
      Electronic, Structural and Vibronic Properties of Chalcogen Monolayers on (001) Surfaces of Elemental Semiconductors
      Proceedings of the 3rd Int. Conf. on the Formation of Semiconductor Interfaces, Rom 1991, Appl. Surf. Science 56- 58, 193 (1992)
    56. P. Krüger and J. Pollmann
      Selfconsistent Electronic Structure of Clean and Adsorbate-Covered Ge(001) Surfaces
      Proceedings of the Vth Symposium on Surface Physics, Chlum Castle, Czechoslowakia, 1990, Progress in Surface Science 35, 3 (1991)
    57. P. Krüger and J. Pollmann
      Self-Consistent Surface Electronic Structure for Semi-infinite Semiconductors from Scattering Theory
      Physica B: Condensed Matter 172, 155 (1991)
    58. J. Pollmann and P. Krüger
      Total Energy and Electronic Structure of S: Ge(001) and Se: Ge(001)
      Proceedings of the 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki, World Scientific (1990) p. 91
    59. E. Landemark, R.I.G. Uhrberg, P. Krüger and J. Pollmann
      Surface Electronic Structure of Ge(001)-(2x1) : Experiment and Theory
      Surf. Sci. Lett. 236, L359 (1990)
    60. P. Krüger and J. Pollmann
      First-Principles Theory of Sulfur Adsorption on Semi- Infinite Ge(001)
      Phys. Rev. Lett. 64, 1808 (1990)
    61. J. Pollmann
      Elektronische Struktur von Halbleiteroberflächen und Halbleitergrenzflächen
      21. IFF-Ferienkurs über "Festkörperforschung für die Informationstechnik", KFA-Jülich, 1990, p. 8.1-8.42
    62. A. Mazur and J. Pollmann
      Anisotropy of the Mean-Square-Displacements at the Si(001)-(2x1) Surface
      Surf. Sci. 225, 72 (1990)
    63. A. Mazur and J. Pollmann
      Mean-Square-Displacements at the Reconstructed Si(001)-(2x1) Surface
      Proceedings of the 7th Int. Conf. on Solid Surfaces (ICSS-7), Köln 1989, Vacuum 41, 600 (1990)
    64. P. Krüger and J. Pollmann
      Adsorption of Sulfur on Ge(001): First-principles Calculation of Structural and Electronic Properties
      Proceedings of the 7th Int. Conf. on Solid Surfaces (ICSS-7), Köln 1989, Vacuum 41, 638 (1990)

     

  • 1989 - 1972

    1. A. Mazur and J. Pollmann
      Lattice Dynamics and Mean-Square-Displacements of the Reconstructed Si(001)-(2x1) Surface
      Proceedings of the 3rd Int. Conf. on Phonon Physics ("Phonons 89"), Heidelberg, World Scientific, Singapore (1989) p. 943
    2. A. Mazur and J. Pollmann
      Lattice Dynamics of Si Calculated with a Semiempirical Approach
      Phys. Rev. B 39, 5261 (1989)
    3. P. Krüger and J. Pollmann
      Scattering-Theoretical Method for Semiconductor Surfaces: Self-consistent Formulation and Application to Si(001)-(2x1)
      Phys. Rev. B 38, 10578 (1988)
    4. R. Kalla and J. Pollmann
      Bond-Angle Relaxation and Electronic Structure of Si and Ge Overlayers on (110) Surfaces of III-V Semiconductors
      Surf. Sci. 200, 80 (1988)
    5. B. Gerlach, D. Richter and J. Pollmann
      Excitons in a Homogeneous Magnetic Field: A Modified Perturbation Approach
      Z. Phys. B. 66, 419 (1987)
    6. I. Hernandez-Calderon, H. Höchst, A. Mazur and J. Pollmann
      Angle-Resolved Ultraviolet Photoemission Spectroscopy Study of the Electronic Structure of In Sb (111) Surfaces along the [110] Azimuth
      J. Vac. Sci. Technol. A5(4), 2042 (1987)
    7. J. Pollmann, P. Krüger and A. Mazur
      Self-Consistent Electronic Structure of Semiinfinite Si(001)-(2x1) and Ge(001)-(2x1) with Model Calculations for Scanning Tunneling Microscopy
      J. Vac. Sci. Technol. B5, 945 (1987)
    8. M. Schreiber, M. Fieseler, A. Mazur, J. Pollmann, B. Stock and R.G. Ulbrich
      Dispersive Phonon Focusing in Gallium Arsenide
      Proceedings of the 18. Int. Conf. on the Physics of Semiconductors, Stockholm, edited by Olaf Engström (World Scientific, Singapore, 1986) P. 1373
    9. J. Pollmann, P. Krüger, A. Mazur and G. Wolfgarten
      Selfconsistent Electronic Structure of Semiinfinite Ge(001)-(2x1)
      Proceedings of the 18. Int. Conf. on the Physics of Semiconductors, Stockholm, edited by Olaf Engström (World Scientific, Singapore, 1986) p. 81
    10. A. Mazur and J. Pollmann
      Surface Vibrational Excitations on Si(001)-(2x1)
      Phys. Rev. Lett. 57, 1811 C (1986)
    11. P. Krüger. A. Mazur, J. Pollmann and G. Wolfgarten
      First-Principles Electronic Structure Theory for Semiinfinite Semiconductors with Applications to Ge(001)-(2x1) and Si(001)-(2x1)
      Phys. Rev. Lett. 57, 1468 (1986)
    12. J. Pollmann. R. Kalla, P. Krüger, A. Mazur and G. Wolfgarten
      Atomic, Electronic, and Vibronic Structure of Semiconductor Surfaces
      Appl. Physics A 41, 21 (1986)
    13. A. Goldmann. P. Koke, W. Mönch, G. Wolfgarten and J. Pollmann
      Angle-Resolved Photoemission from Si(100): Direct versus Indirect Transitions
      Surface Science 169, 438 (1986)
    14. M. Podgorny, G. Wolfgarten and J. Pollmann
      Bandstructure of SixGe1-x Alloys: Selfconsistent Virtual Crystal Approximation
      J. Phys. C: Solid State Phys. 19, L141 (1986)
    15. G. Wolfgarten, P. Krüger and J. Pollmann
      Self-Consistent Scattering Theoretical Method for Surfaces: Application to Si(100)
      Sol. State Commun. 54, 839 (1985)
    16. P. Krüger, G. Wolfgarten and J. Pollmann
      Nonlocal Density Functional Theory of Solids: Applications of the Weighted Density Approximation to Silicon
      Sol. State Commun. 53, 885 (1985)
    17. P.K. Larsen and J. Pollmann
      Interaction of Hydrogen with GaAs(001)-(2x4)
      Sol. State Commun. 53, 277 (1985)
    18. P. Koke, A. Goldmann, W. Mönch, G. Wolfgarten and J. Pollmann
      Angle-Resolved Photoemission from Si(100): Identification of Bulk Band Transitions
      Proceedings of ECOSS6, York, April 1984
      Surf. Sci. 152/153, 1001 (1985)
    19. J. Pollmann, P. Krüger, A. Mazur and G. Wolfgarten
      Electronic Properties of Semiconductor Surfaces and Interfaces: Selected Results from Green's Function Studies
      Proceedings of ECOSS6, York, April 1984
      Surf. Sci. 152/ 153, 977 (1985)
    20. P. Krüger and J. Pollmann
      Green's Function Studies of Ge Adsorption on GaAs(110)
      Phys. Rev. B 30, 3406 (1984)
    21. A. Mazur and J. Pollmann
      Electronic Properties of (211) Surfaces of Group IV and III-V Semiconductors
      Phys. Rev. B 30, 2084 (1984)
    22. P. Krüger and J. Pollmann
      Ge-GaAs Heterostructures: From Chemisorption to Heterojunction Interface Formation
      J. Vac. Sci. Technol. B2, 415 (1984)
    23. J. Pollmann
      Electronic Properties of Interfaces
      Proceedings of the 3rd EPS Conference of the Condensed Matter Division, Lausanne, Schweiz
      Helvetia Physica Acta 56, 493 (1983)
    24. M. Schmeits, A. Mazur and J. Pollmann
      Scattering Theoretical Method for Relaxed and Reconstructed Surfaces with Applications to Si(100)-2x1 and GaAs(110)
      Phys. Rev. B 27, 5012 (1983)
    25. J. Pollmann and A. Mazur
      Theory of Semiconductor Heterojunctions
      Proceedings of the Symposium on Interfaces and Contacts, Boston, November 1982
      Thin Solid Films 104, 257 (1983)
    26. J. Pollmann
      New Hexagonal Ring Model for the Reconstruction of the Si(111)-7x7 Surface
      Phys. Rev. Lett. 49, 1649 (1982)
    27. A. Mazur and J. Pollmann
      New Evidence for Asymmetric Dimer Resonstruction on the Si(100)-(2x1) Surface
      Phys. Rev. B 26, 7086 (1982)
    28. H. Büttner and J. Pollmann
      Excitons in Polar Semiconductors
      Proceedings 16. Int. Conf. on the Physics of Semiconductors, Montpellier, France
      Physica 117 & 118 B, 278 (1982)
    29. J. Pollmann, A. Mazur and M. Schmeits
      On the Electronic Structure of the Si(100)-2x1 Surface
      Proceedings 16. Int. Conf. on the Physics of Semiconductors, Montpellier, France
      Physica 117 & 118 B, 771 (1982)
    30. W. Göpel, J. Pollmann, I. Ivanov and B. Reihl
      Angle-Resolved Photoemission from Polar and Nonpolar ZnO Surfaces
      Phys. Rev. B 26, 3144 (1982)
    31. P.K. Larsen, J.F. van der Veen, A. Mazur, J. Pollmann, J.H. Neave and B.A. Joyce
      Surface Electronic Structure of GaAs(001)-2x4: Angle- Resolved Photoemission and Tight Binding Calculations
      Phys. Rev. B 26, 3222 (1982)
    32. J. Beyer, P. Krüger, A. Mazur, J. Pollmann and M. Schmeits
      Electronic Structure Studies of Hydrogen Adsorption and of Vacancies at the Relaxed GaAs(110) Surface
      J. Vac. Sci. Technol. 21, 358 (1982)
    33. A. Mazur, J. Pollmann and M. Schmeits
      Angular-Resolved Initial State Spectra for the Relaxed GaAs(110) Surface
      Sol. State Commun. 42, 37 (1982)
    34. P.K. Larsen, J.F. van der Veen, A. Mazur, J. Pollmann and B.H. Verbeek
      Photoemission from Valence Bands of GaAs(001) grown by Molecular Beam Epitaxy
      Sol. State Commun. 40, 459 (1981)
    35. I. Ivanov and J. Pollmann
      Electronic Structure of Ideal and Relaxed Surfaces of ZnO: A Prototype Ionic Wurtzite Semiconductor and its Surface Properties
      Phys. Rev. B 24, 7275 (1981)
    36. I. Ivanov and J. Pollmann
      Effects of Surface Relaxation on the Electronic Structure of ZnO
      Proceedings of PCSI8 (Williamsburgh, 1981)
      J. Vac. Sci. Technol. 19, 344 (1981)
    37. M. Schmeits, A. Mazur and J. Pollmann
      Electronic Structure of Ideal and Relaxed InSb(110) Surfaces
      Sol. State Commun. 40, 1081 (1981)
    38. A. Mazur, J. Pollmann and M. Schmeits
      Overlayer-Systems: Suitable Samples for Probing Heterojunction Interface Properties
      Sol. State Commun. 36, 961 (1980)
    39. J. Pollmann
      Electronic Structure of a Vacancy at the Si (100) Surface
      in Proceedings of the 11. Int. Conf. on Defects and Radiation Effects in Semiconductors, Oiso, Japan (1980), Inst. Phys. Conf. Ser. No 59, p. 151
    40. A. Mazur, J. Pollmann and M. Schmeits
      Electronic Structure of Segregated Ge-(110) GaAs Overlayer Systems
      in Proceedings of the 15. Int. Conf. on the Physics of Semiconductors, Kyoto; J. Phys. Soc. Japan 49, Suppl. A 1121 (1980)
    41. I. Ivanov and J. Pollmann
      First Surface Electronic Structure of a Wurtzite Semiconductor - The Polar and Nonpolar Surfaces of ZnO
      Sol. State Commun. 36, 361 (1980)
    42. A. Mazur, J. Pollmann and M. Schmeits
      Interface Bands and Layer Densities of States of (110)Ge-GaAs Heterostructures
      in Proceedings of the Fourth Int. Conf. on Solid Surfaces, (Cannes, France), Vol. II, p. 975 (1980)
    43. J. Pollmann
      Vacancies at Si, Ge and GaAs (100) Surfaces
      in Proceedings of the Fourth Int. Conf. on Solid Surfaces, (Cannes, France), Vol. I, p. 7 (1980)
    44. J. Pollmann
      On the Electronic Structure of Semiconductor Surfaces, Interfaces and Defects at Surfaces or Interfaces
      in Festkörperprobleme, (Adv. in Solid State Physics), Vol. XX, J. Treusch (ed.), Vieweg, Braunschweig (1980), p. 117
    45. J. Pollmann, A. Mazur and M. Schmeits
      Electronic Properties of Relaxed Surfaces, Interfaces, Overlayer-Systems and Defects at Surfaces or Interfaces-Applications of the Scattering Theoretical Method
      Surf. Science 99, 165 (1980)
    46. J. Pollmann
      Defects at Surfaces and Interfaces - A Scattering Theoretical Approach
      Sol. State Commun. 34, 587 (1980)
    47. I. Ivanov, A. Mazur and J. Pollmann
      The Ideal (111), (110) and (100) Surfaces of Si, Ge and GaAs - A Comparison of their Electronic Structure
      Surf. Sci. 92, 365 (1980)
    48. J. Pollmann and S.T. Pantelides
      Electronic Structure of the Ge-GaAs and Ge-ZnSe (100) Interfaces
      Phys. Rev. B 21, 709 (1980)
    49. I. Ivanov and J. Pollmann
      A Microscopic Approach to the Quantum Size Effect in Superlattices
      Sol. State Commun. 32, 869 (1979)
    50. J. Pollmann and S.T. Pantelides
      Electronic Structure of Ge Overlayers on (100) GaAs
      J. Vac. Sci. Technol. 16, 1498 (1979)
    51. S.T. Pantelides and J. Pollmann
      Critique of the Empirical Tight-Binding Method for Surfaces and Interfaces
      J. Vac. Sci. Technol. 16, 1349 (1979)
    52. J. Pollmann and S.T. Pantelides
      New Method for the Electronic Structure of Heterojunctions---Application to the (100) Ge-GaAs Interface
      Sol. State Commun. 30, 621 (1979)
    53. J. Pollmann and S.T. Pantelides
      Localization of Electronic States at Free Semiconductor Surfaces
      Phys. Rev. B 20, 1740 (1979)
    54. N.O. Lipari and J. Pollmann
      Theory of Excitons in a Magnetic Field for Anisotropic and Polar Semiconductors
      Proc. of the XIV. Int. Conf. on the Physics of Semiconductors, Edinburg 1978, Inst. Phys. Conf. Ser. No 43, 1079 (1979)
    55. J. Pollmann and S.T. Pantelides
      Electronic Structure of Semiconductor Surfaces and Interfaces---A Novel Approach Based on Scattering Theory
      Proc. of the XIV. Int. Conf. on the Physics of Semiconductors, Edinburgh 1978, Inst. Phys. Conf. Ser. No 43, 199 (1979)
    56. J. Pollmann, N.O. Lipari and H. Büttner
      Quenching of Exciton Diamagnetic Shifts in Polar, Layered Materials
      Sol. State Commun. 28, 203 (1978)
    57. S.T. Pantelides, J. Bernholc, J. Pollmann and N.O. Lipari
      Green's Functions Scattering-Theoretic Methods for Point Defects, Surfaces and Interfaces
      Int. Journ. Quant. Chem. 12, 507 (1978)
    58. J. Pollmann and S.T. Pantelides
      Scattering-Theoretic-Approach to the Electronic Structure of Semiconductor Surfaces: The (100) Surface of Tetrahedral Semiconductors and SiO2
      Phys. Rev. B 18, 5524 (1978)
    59. J. Pollmann and H. Büttner
      Effective Hamiltonians and Bindings Energies of Wannier Excitons in Polar Semiconductors
      Phys. Rev. B 16, 4480 (1977)
    60. B. Gerlach and J. Pollmann
      Wannier Excitons in Layered Semiconductors
      Il Nuovo Cimento B 38, 423 (1977)
    61. G. Behnke, H. Büttner and J. Pollmann
      Ground-State Energy of the Exciton-Phonon System in a Magnetic Field
      Sol. State Commun. 20, 873 (1976)
    62. J. Pollmann
      Exciton Ground-State in Strongly Anisotropic Crystals
      Sol. State Commun. 19, 361 (1976)
    63. J. Pollmann
      Some Remarks on the Fine Structure of Excitonic Lines in CuCl
      phys. stat. sol. (b) 71, K147 (1975)
    64. J. Pollmann and H. Büttner
      Upper Bounds for the Ground-State Energy of the Exciton-Phonon System
      Sol. State Commun. 17, 1171 (1975)
    65. B. Gerlach and J. Pollmann
      Binding Energies and Wave Functions of Wannier Excitons in Uniaxial Crystals -- A Modified Perturbation Approach: II. Applications
      phys. stat. sol. (b) 67, 477 (1975)
    66. B. Gerlach and J. Pollmann
      Binding Energies and Wave Functions of Wannier Excitons in Uniaxial Crystals - A Modified Perturbation Approach: I. Theory
      phys. stat. sol. (b) 67, 93 (1975)
    67. J. Pollmann
      Improved Perturbation Treatment of Bound-State Problems with Special Applications to the Exciton
      phys. stat. sol. (b) 63, 501 (1974)
    68. J. Pollmann
      Elastic Interaction of Point Defects with Tetragonal Symmetry in Anisotropic, Cubic Crystals
      KFA-Jülich-Report; Jül-1023-FF (November 1973)
    69. J. Pollmann and H. Büttner
      Phonon Influence on the Biexciton Binding in CuCl and CuBr
      Sol. State Commun. 12, 1105 (1973)
    70. P.H. Dederichs and J. Pollmann
      Elastic Displacement Field of Point Defects in Anisotropic, Cubic Crystals.
      Zeitschrift für Physik A: Hadrons und Nuclei 255, 315 (1972)
    71. P.H. Dederichs and J. Pollmann
      Elastisches Verschiebungsfeld und Wechselwirkungsenergie von Punktdefekten in anisotropen, kubischen Kristallen
      KFA-Jülich-Report; Jül-836-FF (März 1972)