KRÜGER, apl. Prof. Dr. Peter
Institut für Festkörpertheorie
apl. Prof. Dr.
Bereich/Gruppe: AG Rohlfing
Publikationen
2024 - 2011
F. Schöttke, P. Krüger, L. Hammer, T. Kißlinger, M.A. Schneider and M. Donath
L-gap surface resonance at Pt(111): Influence of atomic structure, d bands, and spin-orbit interaction
Phys. Rev. Research 6, 023314 (2024)S. Schemmelmann, P. Krüger, P. Härtl, and M. Donath
Spin-dependent hybridization of image-potential states and overlayer states: One monolayer of TI on Ag(111)
Phys. Rev. B 109, 165417 (2024)P.J. Grenz, P. Krüger and M. Donath
Interplay of spin-orbit and exchange interaction in a ferromagnet/heavy-metal hybrid system: Ni on W(110)
New. J. Phys. 25 (2023), 103037P. Härtl, S. Schemmelmann, P. Krüger, M. Donath, and M. Bode
Structural and electronic properties of TI films on Ag(111): From (√3) × √3) surface alloy to moiré superstructure
Phys. Rev. B 107, 205144 (2023)M. Holtmann, P. Krüger, K. Miyamoto, T. Okuda, K. Shimada, and M. Donath
Surface electronic structure of Re(0001): A spin-resolved photoemission study
Phys. Rev. B 107, 165420 (2023)
A. Kirchhoff, T. Deilmann, P. Krüger, and M. Rohlfing
Electronic and optical properties of a hexagonal boron nitride monolayer in its pristine form and with point defects from first principles
Phys. Rev. B 106, 045118 (2022)M. Holtmann, P. Krüger, K. Miyamoto, T. Okuda, P.J. Grenz, S. Kumar, K. Shimada, and M. Donath
Distinct Tamm and Shockley surface states on Re(0001) mixed by spin-orbit interaction
Phys. Rev. B 105, L241412 (2022)F. Schöttke, S. Schemmelmann, P. Krüger and Markus Donath
Rashba-split image-potential state and unoccupied surface electronic structure of Re(0001)
Phys. Rev. B 105, 155419 (2022)
S. Schemmelmann, P. Krüger, F. Schöttke, and M. Donath
Rashba-split surface state and spin-dependent photon emission from Re(0001) at Γ
Phys. Rev. B 104, 205425 (2021)M.-C. Heißenbüttel, T. Deilmann, P. Krüger, and M. Rohlfing
Valley-Dependent Interlayer Excitons in Magnetic WSe2/CrI3
Nano Lett. 2021 (June 2, 2021)
T. Deilmann, P. Krüger, and M. Rohlfing
Ab initio studies of exciton g factors: Monolayer transition metal dichalcogenides in magnetic fields
Phys. Rev. Lett. 124, 226402 (2020)P. Eickholt, P. Krüger, S.D. Stolwijk, A.B. Schmidt, and M. Donath
Breaking time-reversal symmetry at the M point: Spin signal from a surface state on Tl/Ge(111)
Phys. Rev. B 101, 165411 (2020)
L. Eschmann, A. Sabitova, R. Temirov, F.S. Tautz, P. Krüger, and M. Rohlfing
Coverage-dependent anisotropy of the NTCDA/Ag(111) interface state dispersion
Phys. Rev. B 100, 125155 (2019)M.-C. Heissenbüttel, P. Marauhn, T. Deilmann, P. Krüger, and M. Rohlfing
Nature of the excited states of layered systems and molecular excimers: Exciplex states and their dependence on structure
Phys. Rev. B 99, 035425 (2019)
N. Aghdassi, P. Krüger, S. Linden, D. Dulson and H. Zacharias
UV-induced formation of oxygen-derived dangling bonds on hydroxyl-terminated SiC
J. Phys.: Condens. Matter 30, 435002 (2018)M. Drüppel, T. Deilmann, J. Noky, P. Marauhn, P. Krüger, and M. Rohlfing
Electronic excitations in transition metal dichalcogenide monolayers from an LDA+GdW approach
Phys. Rev. B 98, 155433 (2018)P. Eickholt, J. Noky, E. F. Schwier, K. Shimada, K. Miyamoto, T. Okuda, C. Datzer, M. Drüppel, P. Krüger, M. Rohlfing, and M. Donath
Location of the valence band maximum in the band structure of anisotropic 1T'−ReSe2
Phys. Rev. B 97, 165130 (2018)
M. Drüppel, T. Deilmann, P. Krüger, and M. Rohlfing
Diversity of trion states and substrate effects in the optical properties of an MoS2 monolayer
Nat. Comm. 8, 2117 (2017)S. Stolwijk, A.B. Schmidt, K. Sakamoto, P. Krüger, and M. Donath
Valley spin polarization of Tl/Si(111)
Phys. Rev. Mat. 1, 064604 (2017)A. Arora, J. Noky, M. Drüppel, B. Jariwala, T. Deilmann, R. Schneider, R. Schmidt, O. Del Pozo-Zamudio, T. Stiehm, A. Bhattacharya, P. Krüger, S. Michaelis de Vasconcellos, M. Rohlfing, and R. Bratschitsch
Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T'-ReSe2
Nano Lett. 17, 3202 (2017)C. Datzer, A. Zumbülte, J. Braun, T. Förster, A.B. Schmidt, J. Mi, B. Iversen, P. Hofmann, J. Minár, H. Ebert, P. Krüger, M. Rohlfing, and M. Donath
Unraveling the spin structure of unoccupied states in Bi2Se3
Phys. Rev. B 95, 115401 (2017)
M.F.B. Green, C. Wagner, P. Leinen, T. Deilmann, P. Krüger, M. Rohlfing, F.S. Tautz, and R. Temirov
Scanning quantum dot microscopy: A quantitative method to measure local electrostatic potential near surfaces
Jap. J. Appl. Phys. 55, 08NA04 (2016)T. Förster, P. Krüger, and M. Rohlfing
GWcalculations for Bi2Te3 and Sb2Te3 thin films: Electronic and topological properties
Phys. Rev. B 93, 205442 (2016)T. Esat, B. Lechtenberg, T. Deilmann, C. Wagner, P. Krüger, R. Temirov, M. Rohlfing, F.B. Anders, and F.S. Tautz
A chemically driven quantum phase transition in a two-molecule Kondo system
Nature Physics 12, 867 (2016)
WWU News (April 2016): Auf der Suche nach magnetischen Eigenschaften von MolekülenP. Eickholt, P. Krüger, S.D. Stolwijk, A.B. Schmidt, and M. Donath
Effects of orbital composition in a pair of spin-orbit-split surface bands at Tl/Ge(111)
Phys. Rev. B 93, 085412 (2016)
T. Förster, P. Krüger, and M. Rohlfing
Two-dimensional topological phases and electronic spectrum of Bi2Se3 thin films from GW calculations
Phys. Rev. B 92, 201404(R) (2015)S.D. Stolwijk, K. Sakamoto, A.B. Schmidt, P. Krüger, and. M. Donath
Spin texture with a twist in momentum space for Tl/Si(111)
Phys. Rev. B 91, 245420 (2015)C. Wagner, M.F.B. Green, P. Leinen, T. Deilmann, P. Krüger, M. Rohlfing, R. Temirov, and F.S. Tautz
Scanning Quantum Dot Microscopy
Phys. Rev. Lett. 115, 026101 (2015)S.N.P. Wissing, K.T. Ritter, P. Krüger, A.B. Schmidt, and M. Donath
Spin-dependent size of interband hybridization gap: The interplay of adlayer and substrate states in Pb/Cu(111)
Phys. Rev. B 91, 201403(R) (2015)T. Esat, T. Deilmann, B. Lechtenberg, C. Wagner, P. Krüger, R. Temirov, F. Anders, M. Rohlfing, and F. Tautz
Transfering spin into an extended π orbital of a large molecule
Phys. Rev. B 91, 144415 (2015)T. Förster, P. Krüger, and M. Rohlfing
Ab initio studies of adatom- and vacancy-induced band bending in Bi2Se3
Phys. Rev. B 91, 035313 (2015)
S.D. Stolwijk, K. Sakamoto, A.B. Schmidt, P. Krüger, and M. Donath
Thin line of a Rashba-type spin texture: Unoccupied surface resonance of Tl/Si(111) along ΓM
Phys. Rev. B 90, 161109(R) (2014)M. Drüppel, P. Krüger, and M. Rohlfing
Strain tuning of Dirac states at the SnTe(001) surface
Phys. Rev. B 90, 155312 (2014)J. Pollmann, X. Peng, J. Wieferink, and P. Krüger
Adsorption of hydrogen and hydrocarbon molecules on SiC(001)
Surface Science Reports 69, 55 (2014)F. Huerkamp, P. Krüger, and J. Pollmann
Investigation of electron transmission through Co/C/Co magnetic tunnel junctions
Phys. Rev. B 89, 125302 (2014)T. Deilmann, P. Krüger, M. Rohlfing, and D. Wegner
Adsorption and STM imaging of tetracyanoethylene on Ag(001): An ab initio study
Phys. Rev. B 89, 045405 (2014)
S. Stolwijk, A. Schmidt, M. Donath, K. Sakamoto and P. Krüger
Rotating Spin and Giant Splitting: Unoccupied Surface Electronic Structure of Tl/Si(111)
Phys. Rev. Lett. 111, 176402 (2013)
C. Sommer, P. Krüger, and J. Pollmann
Optical spectra of alkali-metal fluorides
Phys. Rev. B 86, 155212 (2012)C. Sommer, P. Krüger, and J. Pollmann
Quasiparticle band structure of alkali-metal fluorides, oxides, and nitrides
Phys. Rev. B 85, 165119 (2012)
N. Aghdassi, R. Ostendorf, P. Krüger and H. Zacharias
Angle-resolved inverse photoemission of H-etched 6H-SiC(0001)
Surface Science 605, 788 (2011)C. Wieferink, P. Krüger, and J. Pollmann
Influence of tip structure on tip-sample interaction forces at the KBr(001) surface: Results from ab initio investigations
Phys. Rev. B 84, 195402 (2011)B. Stärk, P. Krüger, and J. Pollmann
Magnetic anisotropy of thin Co and Ni films on diamond surfaces
Phys. Rev. B. 84, 195316 (2011)C. Wieferink, P. Krüger, and J. Pollmann
Simulations of friction force microscopy on the KBr(001) surface based on ab initio calculated tip-sample forces
Phys. Rev. B 83, 235328 (2011)2010 - 2000
J. Wieferink, P. Krüger, and J. Pollmann
Ab-initio study of atomic hydrogen diffusion on the clean and hydrogen-terminated Si(001) surface
Phys. Rev. B 82, 075323 (2010)B. Stärk, P. Krüger, and J. Pollmann
Magnetic Properties of Co and Ni Multilayers on Diamond Surfaces
Proceedings of NIC Symposium, 24-25 February 2010, FZ-Jülich, p. 207 (2010)B. Stärk, P. Krüger, and J. Pollmann
Cobalt multilayers on diamond surfaces: An ab-initio study
Phys. Rev. B 81, 035321 (2010)
B. Baumeier, P. Krüger, and J. Pollmann
First-principles investigation of the atomic and electronic structure of the 4H-SiC(1102)-c(2x2) surface
Phys. Rev. B 78, 145318 (2008)J. Wieferink, P. Krüger, and J. Pollmann
First-principles study of benzene adsorption on the SiC(001)-(3x2) surface
Phys. Rev. B 78, 165315 (2008)B. Baumeier, P. Krüger, J. Pollmann, and G. Vajenine
Electronic structure of alkali-metal fluorides, oxides and nitrides: Density-functional calculations including self-interaction corrections
Phys. Rev. B 78, 125111 (2008)P. Krüger, B. Baumeier, and J. Pollmann
First-Principles Investigation of an Epitaxial Silicon Oxynitride Layer on a 6H-SiC(0001) Surface
Phys. Rev. B 77, 085329 (2008)X. Peng, P. Krüger, and J. Pollmann
Adsorption processes of hydrogen molecules on SiC(001), Si(001), and C(001) surfaces
New Journal of Physics 10, 125028 (2008)M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
Desorption force on hydrogen atoms from resonant excitations of the H:Si(001)-(2x1) surface
Surf. Sci. 602, 3208 (2008)
B. Baumeier, P. Krüger, and J. Pollmann
Bulk and surface electronic structure of alkaline-earth metal oxides: Bound surface and image-potential states from first principles
Phys. Rev. B 76, 205404 (2007)X. Peng, P. Krüger, and J. Pollmann
Hydrogenated SiC(001)-(3x2) surface: Semiconducting and metallic structures
Phys. Rev. B 76, 125303 (2007)B. Baumeier, P. Krüger, and J. Pollmann
Structural, elastic, and electronic properties of SiC, BN, and BeO nanotubes
Phys. Rev. B 76, 085407 (2007)J. Wieferink, P. Krüger, and J. Pollmann
First-principles study of acetylene adsorption on b-SiC(001)-(3x2)
Phys. Rev. B 75, 153305 (2007)X. Peng, P. Krüger, and J. Pollmann
Why thermal H2 molecules adsorb on SiC(001)-c(4-2) and not on SiC(001)-(3x2) at room temperature
Phys. Rev. B 75, 073409 (2007)B. Baumeier, P. Krüger, and J. Pollmann
Atomic and electronic structure of BeO and the BeO(1010) surface: An ab initio investigation
Phys. Rev. B 75, 045323 (2007)
J. Wieferink, P. Krüger, and J. Pollmann
Improved hybrid algorithm with Gaussian basis sets and plane waves: First-principles calculations of ethylene adsorption on β-SiC(001)-(3x2)
Phys. Rev. B 74, 205311 (2006)N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
Electronic excitations of the H:Si(001)-(2x1) monohydride surface
Phys. Rev. B 74, 155405 (2006)X. Peng, J. Wieferink, P. Krüger, and J. Pollmann
Structural and Electronic Properties of Clean and Adsorbate-Covered (001) Surfaces of Cubic SiC
Proceedings of NIC Symposium, 1-2 March 2006, p. 135, FZ-Jülich (2006)X. Peng, P. Krüger and J. Pollmann
Hydrogen-induced metallization of the 3C-SiC(001)-(3x2) surface
Surf. Sci. 600, 3564 (2006)J. Wieferink, P. Krüger, and J. Pollmann
First-principles study of acetylene and ethylene adsorption on β-SiC(001)-(2x1)
Phys. Rev. B 73, 115309 (2006)B. Baumeier, P. Krüger, and J. Pollmann
Self-interaction-corrected pseudopotentials for silicon carbide
Phys. Rev. B 73, 195205 (2006)P. Krüger, and J. Pollmann
Generalized reconstruction model of SiC(001)-(nx2) surfaces and Si ad-dimer nanostrings
Phys. Rev. B 73, 035327 (2006)
M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
Dynamics of excited electronic states at clean and adsorbate-covered insulator surface
Surf. Sci. 593, Issues 1-3, p. 19-25 (2005)X. Peng, P. Krüger, and J. Pollmann
Metallization of the 3C-SiC(001)-(3x2) surface induced by hydrogen adsorption: A first-principles investigation
Phys. Rev. B 72, 245320 (2005)N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
Femtosecond dynamics of excited states of CO adsorbed on MgO(001)-(1x1)
Phys. Rev. B 71, 045407 (2005)
J. Pollmann, and P. Krüger
Reconstruction of cubic SiC surfaces
J. Phys.: Condens. Matter 16, S1659 - S1703 (2004)N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
Fast Initial Decay of Molecular Excitations at Insulator Surfaces
Phys. Rev. Lett. 92, 216805 (2004)U. Freking, P. Krüger, A. Mazur, and J. Pollmann
Surface phonons of Si(001)-(1x1) dihydride
Phys. Rev. B 69, 035315 (2004)
J. Pollmann and P. Krüger
Green Functions in the Theory of Semiconductor Surfaces
Prog. Surf. Sci. 74, 269 (2003)M. Rohlfing, N.-P. Wang, P. Krüger, and J. Pollmann
Image States and Excitons at Insulator Surfaces with Negative Electron Affinity
Phys. Rev. Lett. 91, 256802 (2003)N.-P. Wang, M. Rohlfing, P. Krüger, and J. Pollmann
Electronic excitations of CO adsorbed on MgO(001)
Appl. Phys. A 78, 213 (2003)F. Sökeland, M. Rohlfing, P. Krüger, and J. Pollmann
Density functional and quasiparticle band-structure calculations for GaxAl1-xN and GaxIn1-xN alloys
Phys. Rev. B 68, 075203 (2003)N.-P. Wang, M. Rohlfing, P. Krüger and J. Pollmann
Quasiparticle band structure and optical spectrum of LiF(001)
Phys. Rev. B 67, 115111 (2003)
Fu-He Wang, P. Krüger and J. Pollmann
First principles investigation of the C-terminated β-SiC(001)-c(2x2) surface
Phys. Rev. B 66, 195335 (2002)J. Pollmann, P. Krüger, A. Mazur and M. Rohlfing
Electrons, Phonons and Excitons at Semiconductor Surfaces
Festkörperprobleme/Advances in Solid State Physics, Springer Verlag, Heidelberg (2002), pp. 189-206Fu-He Wang, P. Krüger, and J. Pollmann
Surface electronic structure of GaN(0001)-(1x1): Comparison between theory and experiment
Surf. Sci. 499, Issues 2-3, p. 193-202 (2002)C. Kreis, S. Werth, R. Adelung, L. Kipp, M. Skibowski, D. Voß, P. Krüger, A. Mazur and J. Pollmann
Surface resonances at transition metal dichalcogenide heterostructures
Phys. Rev. B 65, 153314 (2002)
Fu-He Wang, P. Krüger, and J. Pollmann
Electronic structure of 1x1 GaN(0001) and GaN(0001) surfaces
Phys. Rev. B 64, 035305 (2001)K. Rossnagel, O. Seifarth, L. Kipp, M. Skibowski, D. Voß, P. Krüger, A. Mazur and J. Pollmann
Fermi surface of 2H-NbSe2 and its implications on the charge-density-wave mechanism
Phys. Rev. B 64, 235119 (2001)K. Rossnagel, L. Kipp, M. Skibowski, C. Solterbeck, T. Strasser, W. Schattke, D. Voß, P. Krüger, A. Mazur and J. Pollmann
Three-dimensional Fermi surface determination by ARPES
Phys. Rev. B 63, 125104 (2001)Th. Böker, R. Severin, A. Müller, C. Janowitz, R. Manzke, D. Voß, P. Krüger, A. Mazur and J. Pollmann
Band structures of MoS2, MoSe2 and MoTe2: Angular-resolved photoelectron spectroscopy in the constant-final-state mode and ab-initio calculations
Phys. Rev. B 64, 235305 (2001)R. Kucharczyk, U. Freking, P. Krüger and J. Pollmann
Electronic properties of AlGaAs-based biperiodic superlattices via pseudopotential calculations
Surf. Sci. 482-485, 612 (2001)
J. Pollmann and P. Krüger
Electronic Structure of Semiconductor Surfaces
Chapter 2, in Handbook of Surface Science, Elsevier Science B.V. (2000), pp. 96-208W. Lu, P. Krüger, and J. Pollmann
Atomic and electronic structure of silicate adlayers on polar hexagonal SiC surfaces
Phys. Rev. B 61, 13737 (2000)C. Stampfl, Ch. Van de Walle, D. Vogel, P. Krüger, and J. Pollmann
Native defects and impurities in InN: First-principles studies using the local-density approximation and self- interaction and relaxation-corrected pseudopotentials
Phys. Rev. B 61, R7846 (2000)W. Lu, P. Krüger, and J. Pollmann
Ab-initio studies of the β-SiC(001)-(5x2) surface
Phys. Rev. B 61, 2680 (2000)J. Pollmann, P. Krüger and W. Lu
Theory of Structural and Electronic Properties of Cubic SiC Surfaces
Materials Science Forum 338-342, 369 (2000)W. Lu, P. Krüger and J. Pollmann
Ab initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (√3 x √3)-R30° Reconstruction
Materials Science Forum 338-342, 349 (2000)1999 - 1982
D. Voß, P. Krüger, A. Mazur, and J. Pollmann
Atomic and electronic structure of WSe2 from ab-initio theory: Bulk crystal and thin film systems
Phys. Rev. B 60, 14311 (1999)W. Lu, P. Krüger, and J. Pollmann
Atomic and electronic structure of β-SiC(001)-(3x2)
Phys. Rev. B 60, 2495 (1999)
J. Neuhausen, V. K. Evstaf'iev, Th. Block, E. W. Finckh, W. Tremel, L. Augustin, H. Fuchs, D. Voß, P. Krüger, A. Mazur, and J. Pollmann
Scanning probe microscopy study of the metal-rich layered chalcogenides TaM2Te2 (M = Co, Ni)
Chem. Mater. 10 (12), pp. 38703878 (1998)W. Lu, P. Krüger, and J. Pollmann
Missing-row asymmetric-dimer reconstruction of SiC(001)- c(4x2)
Phys. Rev. Lett. 81, 2292 (1998)D. Vogel, P. Krüger, and J. Pollmann
Ab-initio electronic structure calculations of silver halides with SIRC pseudopotentials
Phys. Rev. B 58, 3865 (1998)V. Gräschus, A. Mazur, P. Krüger and J. Pollmann
Surface phonons of As:Si(111)-(1x1) and As:Si(001)- (2x1)
Phys. Rev. B 57, 13175 (1998)M. Rohlfing, P. Krüger, and J. Pollmann
Role of semicored electrons in quasiparticle band- structure calculations
Phys. Rev. B 57, 6485 (1998)D. Vogel, P. Krüger, and J. Pollmann
Ab-initio calculations of CdS, CdSe and CdTe surfaces
Surf. Sci. 402-404, 774 (1998)G. Hirsch, P. Krüger, and J. Pollmann
Surface passivation of GaAs(001) by sulfur: ab-initio studies
Surf. Sci. 402-404, 778 (1998)K. Würde, P. Krüger, A. Mazur, and J. Pollmann
First-principles investigations of the atomic and electronic structure of Pb, Sn and Ge adsorbed on the Ge(111)-(√3 x √5) surface
Surface Review and Letters 5, 105 (1998)M. Sabisch, P. Krüger, A. Mazur, and J. Pollmann
Structure of 6H-SiC(0001) surfaces from ab-initio calculations
Surface Review and Letters 5, 199 (1998)
M. Rohlfing, P. Krüger, and J. Pollmann
Quasiparticle calculations of semicore states in Si, Ge, and CdS
Phys. Rev. B 56, R7065 (1997)M. Rohlfing, P. Krüger, and J. Pollmann
Quasiparticle calculations of surface core-level shifts
Phys. Rev. B 56, 2191 (1997)J. Pollmann, P. Krüger, and M. Sabisch
Atomic and electronic structure of SiC surfaces from ab- initio calculations
phys. stat. sol. (b) 202, 421 (1997)J. Pollmann, P. Krüger, and M. Sabisch
Atomic and electronic structure of SiC surfaces from ab-initio calculations
phys. stat. sol. (b) 202, 421 (1997)D. Vogel, P. Krüger, and J. Pollmann
Structural and electronic properties of group III- nitrides
Phys. Rev. B 55, 12836 (1997)M. Sabisch, P. Krüger, and J. Pollmann
Ab-initio calculations of structural and electronic properties of 6H-SiC(0001) surfaces
Phys. Rev. B 55, 10561 (1997)
D. Vogel, P. Krüger, and J. Pollmann
New pseudopotentials for II-VI semiconductors
in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
World Scientific, 1996, p. 617M. Sabisch, P. Krüger, A. Mazur, and J. Pollmann
Electronic structure of 6H-SiC(0001) surfaces
in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
World Scientific, 1996, p. 819M. Rohlfing, P. Krüger, and J. Pollmann
Quasiparticle calculations for bulk semiconductors and their surfaces
in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
World Scientific, 1996, p. 297P. Krüger and J. Pollmann
Initial stages of carbon adsorption at the H:C(001) surface
in 'Physics of Semiconductors', edited by M. Scheffler and R. Zimmermann
World Scientific, 1996, p. 947J. Pollmann, P. Krüger, M. Rohlfing, M. Sabisch, and D. Vogel
Ab-initio calculations of structural and electronic properties of prototype surfaces of group IV, III-V and II-VI semiconductors
Appl. Surf. Science 104/105, 1 (1996)Rohlfing, P. Krüger, and J. Pollmann
Quasiparticle band structures of clean, hydrogen- and sulfur-terminated Ge(001) surfaces
Phys. Rev. B 54, 13759 (1996)D. Vogel, P. Krüger, and J. Pollmann
Self-interaction and relaxation-corrected pseudopotentials for II-VI semiconductors
Phys. Rev. B 54, 5495 (1996)M. Sabisch, P. Krüger, A. Mazur, M. Rohlfing, and J. Pollmann
First-principles calculations of β-SiC(001) surfaces
Phys. Rev. B 53, 13121 (1996)
M. Rohlfing, P. Krüger and J. Pollmann
Quasiparticle Band Structure of CdS
Phys. Rev. Lett. 75, 3489 (1995)M. Rohlfing, P. Krüger and J. Pollmann
Metallic nature of the symmetric dimer model of Si(001)-(2x1)
Phys. Rev. B 52, 13753 (1995)D. Vogel, P. Krüger and J. Pollmann
Ab initio electronic-structure calculations for II-VI semiconductors using self-interaction-corrected pseudopotentials
Phys. Rev. B 52, R 14316 (1995)M. Rohlfing, P. Krüger and J. Pollmann
Efficient scheme for GW quasiparticle bandstructure calculations with applications to bulk Si and to the Si(001)-(2x1) surface
Phys. Rev. B 52, 1905 (1995)M. Sabisch, P. Krüger and J. Pollmann
Ab initio calculations of SiC(110) and GaAs(110) surfaces: A comparative study and the role of ionicity
Phys. Rev. B 51, 13367 (1995)P. Krüger and J. Pollmann
Dimer Reconstruction of Diamond, Si and Ge(001) surfaces
Phys. Rev. Lett. 74, 1155 (1995)
P. Krüger and J. Pollmann
Theory of adsorption: Ordered monolayers from Na to Cl on Si(001) and Ge(001)
Appl. Phys. A 59, 487 (1994)P. Schröer, P. Krüger, and J. Pollmann
Selfconsistent electronic structure calculations of the surfaces of the wurtzite compounds ZnO and CdS
Phys. Rev. B 49, 17092 (1994)P. Krüger and J. Pollmann
Bond Length of Ge Dimers at Si(001)
Phys. Rev. Lett. 72, 1130 C (1994)P. Schröer, P. Krüger, and J. Pollmann
First-Principles Atomic and Electronic Structure Calculations of the ZnO Surface
Proceedings of ICFSI-4, World Scientific, Singapore, 1994, p. 85P. Krüger and J. Pollmann
Dimer Formation and Electronic Properties of ordered Adlayers at Si(001): Results From Local Density Theory
Proceedings of the 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI-4), ed. by B. Lengeler, H. Lüth, W. Mönch and J. Pollmann, (World Scientific, Singapore, 1994) p. 108
P. Schröer, P. Krüger, and J. Pollmann
Ab initio calculations of the electronic structure of the wurtzite compounds CdS and CdSe
Phys. Rev. B 48, 18264 (1993)M. Rohlfing, P. Krüger, and J. Pollmann
Quasiparticle band-structure calculations for C, Si, Ge, GaAs and SiC using Gaussian-orbital basis sets
Phys. Rev. B 48, 17791 (1993)P. Schröer, P. Krüger and J. Pollmann
First-principles Electronic Structure of the Wurtzite Semiconductors ZnO and ZnS
Phys. Rev. B 47, 6971 (1993)P. Krüger and J. Pollmann
Chemical Trends in Adsorption on Semiconductor Surfaces: Results from Local Density Theory
Proceedings of the 16th Int. Seminar on Surface Physics, Kudowa, Poland 1992; Progress in Surface Science, 42, 351 (1993)P. Krüger and J. Pollmann
Ab-Initio Calculations of Si, As, S, Se and Cl Adsorption on Si(001) Surfaces
Phys. Rev. B 47, 1898 (1993)
J. Pollmann, P. Krüger and A. Mazur
Electronic, Structural and Vibronic Properties of Chalcogen Monolayers on (001) Surfaces of Elemental Semiconductors
Proceedings of the 3rd Int. Conf. on the Formation of Semiconductor Interfaces, Rom 1991, Appl. Surf. Science 56- 58, 193 (1992)
P. Krüger and J. Pollmann
Selfconsistent Electronic Structure of Clean and Adsorbate-Covered Ge(001) Surfaces
Proceedings of the Vth Symposium on Surface Physics, Chlum Castle, Czechoslowakia, 1990, Progress in Surface Science 35, 3 (1991)P. Krüger and J. Pollmann
Self-Consistent Surface Electronic Structure for Semi-infinite Semiconductors from Scattering Theory
Physica B: Condensed Matter 172, 155 (1991)
J. Pollmann and P. Krüger
Total Energy and Electronic Structure of S: Ge(001) and Se: Ge(001)
Proceedings of the 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki, World Scientific (1990) p. 91E. Landemark, R.I.G. Uhrberg, P. Krüger and J. Pollmann
Surface Electronic Structure of Ge(001)-(2x1) : Experiment and Theory
Surf. Sci. Lett. 236, L359 (1990)P. Krüger and J. Pollmann
First-Principles Theory of Sulfur Adsorption on Semi- Infinite Ge(001)
Phys. Rev. Lett. 64, 1808 (1990)P. Krüger and J. Pollmann
Adsorption of Sulfur on Ge(001): First-principles Calculation of Structural and Electronic Properties
Proceedings of the 7th Int. Conf. on Solid Surfaces (ICSS-7), Köln 1989, Vacuum 41, 638 (1990)
P. Krüger and J. Pollmann
Scattering-Theoretical Method for Semiconductor Surfaces: Self-consistent Formulation and Application to Si(001)-(2x1)
Phys. Rev. B 38, 10578 (1988)
J. Pollmann, P. Krüger and A. Mazur
Self-Consistent Electronic Structure of Semiinfinite Si(001)-(2x1) and Ge(001)-(2x1) with Model Calculations for Scanning Tunneling Microscopy
J. Vac. Sci. Technol. B5, 945 (1987)
J. Pollmann, P. Krüger, A. Mazur and G. Wolfgarten
Selfconsistent Electronic Structure of Semiinfinite Ge(001)-(2x1)
Proceedings of the 18. Int. Conf. on the Physics of Semiconductors, Stockholm, edited by Olaf Engström (World Scientific, Singapore, 1986) p. 81P. Krüger. A. Mazur, J. Pollmann and G. Wolfgarten
First-Principles Electronic Structure Theory for Semiinfinite Semiconductors with Applications to Ge(001)-(2x1) and Si(001)-(2x1)
Phys. Rev. Lett. 57, 1468 (1986)J. Pollmann. R. Kalla, P. Krüger, A. Mazur and G. Wolfgarten
Atomic, Electronic, and Vibronic Structure of Semiconductor Surfaces
Appl. Physics A 41, 21 (1986)
G. Wolfgarten, P. Krüger and J. Pollmann
Self-Consistent Scattering Theoretical Method for Surfaces: Application to Si(100)
Sol. State Commun. 54, 839 (1985)P. Krüger, G. Wolfgarten and J. Pollmann
Nonlocal Density Functional Theory of Solids: Applications of the Weighted Density Approximation to Silicon
Sol. State Commun. 53, 885 (1985)J. Pollmann, P. Krüger, A. Mazur and G. Wolfgarten
Electronic Properties of Semiconductor Surfaces and Interfaces: Selected Results from Green's Function Studies
Proceedings of ECOSS6, York, April 1984
Surf. Sci. 152/153, 977 (1985)
P. Krüger and J. Pollmann
Green's Function Studies of Ge Adsorption on GaAs(110)
Phys. Rev. B 30, 3406 (1984)P. Krüger and J. Pollmann
Ge-GaAs Heterostructures: From Chemisorption to Heterojunction Interface Formation
J. Vac. Sci. Technol. B2, 415 (1984)
J. Beyer, P. Krüger, A. Mazur, J. Pollmann and M. Schmeits
Electronic Structure Studies of Hydrogen Adsorption and of Vacancies at the Relaxed GaAs(110) Surface
J. Vac. Sci. Technol. 21, 358 (1982)
Projekte
-
abgeschlossene Projekte (als beteiligte Person)
-
Metallisierung von SiC Oberflächen durch Wasserstoff-Adsorption
DFG, Förderung 2005-2010 -
Angeregte Zustände von adsorbierten Molekülen auf Halbleiter- und Isolatoroberflächen
DFG, Förderung 2000-2010 -
Ab-initio Berechnung des elektronischen Spektrums von Halbleiterlegierungen mit großer Bandlücke
DFG, Förderung 1999-2003 - Strukturelle und elektronische Eigenschaften reiner und adsorbatbedeckter Oberflächen von kubischem und hexagonalem Siliziumkarbid
DFG, Förderung 1997-2002 - Theoretische Studien Elektronischer und Struktureller Eigenschaften von Gruppe III-Nitriden sowie ihrer Oberflächen und Grenzfläche
DFG, Förderung 1997-2001
-