Name: Deb Kumar Bhowmick
Diploma / M.Sc degree: IIT Bombay, India
(May 2009)

PhD Project: Electron transfer dynamics from anchored organic molecules into 6H-SiC (0001)


Homepage: http://www.uni-muenster.de/Physik.PI/Zach/deutsch/mitarbeiter_frameset.html

Abstract of Research Project

The wide band gap semiconductor silicon carbide (SiC) is the first choice material for power electronic devices operating at high voltage, high temperature and high switching frequency. The electronic properties of interface between silicon carbide surface and the other materials (organic molecules) are of particular interest. Here we want to investigate the ultrafast heterogeneous electron transfer (HET) from excited singlet states of organic chromophore (like perylene) into the inorganic semiconductor silicon carbide (SiC) with the process of time-resolved two-photon photo emission (TR-2PPE) spectroscopy. It is expected that the strength of the electronic interaction between the chromophore and the semiconductor varies by inserting different types of anchor and bridge groups that function either as electronic wire or electronic tunneling barrier. Self-assembled monolayers (SAM) on silicon carbide (SiC) will be characterized by X-ray photoemission spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy and contact angle measurement. We want to enhance the basic understanding of ultrafast electron transfer mechanism, with the ultimate goal of creating novel organic/inorganic heterostructures.



Publications

D. K. Bhowmick, S. Linden, A. Devaux, L. De Cola, H. Zacharias
Functionalization of Amorphous SiO₂ and 6H-SiC(0001) Surfaces with Benzo[ghi]perylene-1,2-dicarboxylic Anhydride via an APTES Linker
small 8(4) (2012), 592–601.


Deb Kumar Bhowmick
eMail: Deb Kumar Bhowmick